TS7992

Ordering number :EN5961 NPN Triple Diffused Planar Silicon Transistor TS7992 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit:mm 2039D-TO3PML [TS7992] ø3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 4.0 2.8 2.0 2.0 20.4 1.0 0.6 1 2 3 5.45 5.45 1:Base 2:Collector 3:Emitter SANYO:TO-3PML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colletctor-to-Base Voltage Colletctor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚ C Tj Tstg Conditions Ratings 1600 800 6 20 40 3.0 75 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturation Voltage Storage Time Fall Time Symbol ICES VCE=1600V, RBE=0 VCEO(SUS) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO hFE(1) hFE(2) VCE(sat) VBE(sat) tstg tf VCB=800V, IE=0 VCE=5V, IC=1.0A VCE=5V, IC=14A IC=14A, IB=3.5A IC=14A, IB=3.5A IC=12A, IB1=2.0A, IB2=–5.0A IC=12A, IB1=2.0A, IB2=–5.0A 15 4 Conditions Ratings min 800 1.0 10 30 7 5 1.5 3.0 0.2 V V µs µs typ max 1.0 Unit mA V mA µA SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 42498TS (KOTO) TA-1620 No.5961-1/3 3.5 2.0 TS7992 Switching Time Test Circuit PW=20µs DC≤1% INPUT RB VR 50Ω + 100µF + 470µF RL=16.7Ω IB1 IB2 OUTPUT VBE=–2V VCC=200V 20 18 I C - VCE 5.0A 20 I C - VBE VCE =5V 4.5A 4.0A 3.5A 18 Collerctor Current, IC – A 14 12 10 8 6 4 2 3.0A 2.5A 2.0A 1.5A Collerctor Current, IC – A 16 16 14 12 10 1.0A 20˚ 0.5A C 0.2 0.4 0.6 8 6 4 2 IB =0 0 0 1 2 3 4 5 6 7 8 9 10 0 0 Ta= 1 0.8 –40 ˚C 1.0 25˚C 1.2 Collector-to-Emitter Voltage, VCE – V 100 7 5 Base-to-Emitter Voltage, VBE – V 10 7 IC /IB =5 5 hFE - I C VCE =5V VCE(sat) - I C Collector-to-Emitter Saturation Voltage, VCE(sat) – V DC Current Gain, hFE 3 2 10 7 5 3 2 1.0 0.1 Ta=120˚C 25˚C –40˚C 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Ta=–40˚C 120˚C 25˚C 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC – A 7 5 Collector Current, IC – A 10 7 SW Time - I C t stg SW Time - I B2 t stg VCC =200V IC =12A IB1 =2A R load Switching Time, SW Time – µs 3 2 1.0 7 5 3 2 Switching Time, SW Time – µs 5 3 2 1.0 7 5 3 2 0.1 7 7 tf tf VCC =200V 0.1 IC/IB1=6 I /I =2.5 7 B2 B1 R load 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC – A Base Current, IB2 – A No.5961-2/3 TS7992 100 7 5 I CP 3 IC 2 Forward Bias A S O 30 10 0µ s Collector Current, IC – A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 Tc=25˚C 2 1 pulse 0.01 23 1.0 =7 Collector Current, IC – A PC 0µ s 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Reverse Bias A S O 5W s 1m 10 ms D C op er at io n 5 7 10 2 3 5 7 100 2 3 5 7 1000 0.01 1.0 L=100µH IB2 =–5A Tc=25˚C 1 pulse 23 5 7 10 23 5 7 100 23 5 7 1000 23 Collector-to-Emitter Voltage, VCE – V 4.0 Collector-to-Emitter Voltage, VCE – V 80 75 P C - Ta Collector Dissipation, PC – W P C - Tc 70 Collector Dissipation, PC – W 3.0 60 50 40 30 20 10 No 2.0 he at sin k 1.0 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C Case Temperature, Tc – ˚C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 1998. Specifications and information herein are subject to change without notice. PS No.5961-3/3