VEC2301

Ordering number : ENN7647 VEC2301 P-Channel Silicon MOSFET VEC2301 General-Purpose Switching Device Applications Preliminary Features • • • • Package Dimensions unit : mm 2227 [VEC2301] Top View 0.25 0.3 0.15 Bottom View 0.07 • Best suited for load switches. Low ON-resistance. 2.5V drive. Composite type, facilitating high-density mounting. Mount height 0.75mm 8 7 65 2.8 2.3 0.25 1 2 2.9 3 0.65 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --20 ±10 --3 --12 0.9 1.0 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=±8V, VDS=0 Ratings min --20 --1 ±10 typ max Unit V µA µA Marking : BA 0.75 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52004 TS IM TA-100771 No.7647-1/4 VEC2301 Continued from preceding page. Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, ID=--1mA VDS=--10V, ID=-1.5A ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--3A VDS=--10V, VGS=--4.5V, ID=--3A VDS=--10V, VGS=--4.5V, ID=--3A IS=--3A, VGS=0 Ratings min --0.4 2.9 4.9 62 87 680 115 80 13 53 77 62 8.2 1.7 2.1 --0.88 --1.2 81 120 typ max --1.3 Unit V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 0V --4.5V VIN PW=10µs D.C.≤1% ID= --1.5A RL=6.67Ω VOUT VDD= --10V Electrical Connection 8 7 6 5 D G 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 (Top view) VEC2301 P.G 50Ω 1 2 3 4 S --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --0.1 --0.2 --0.3 ID -- VDS --3. 0 --2 V .5V --7 ID -- VGS VDS= --10V --3. 5V --2.0V --6 Drain Current, ID -- A --4.0 V Drain Current, ID -- A --5 --4.5 V --4 --3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 25 --1.6 °C --1.8 --1 Ta = --25 --2 75 °C °C VGS= --1.5V --2.0 Drain-to-Source Voltage, VDS -- V IT06416 Gate-to-Source Voltage, VGS -- V IT06417 No.7647-2/4 VEC2301 160 RDS(on) -- VGS Ta=25°C 140 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 120 100 80 60 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 ID= --1A 100 --2A -I D= 1A , = -V GS 2.5 V 80 -I D= 60 = --4 VGS 2A, .5V 40 20 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 3 yfs -- ID IT06418 --10 7 5 3 2 Ambient Temperature, Ta -- °C IT06419 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S VDS= --10V 2 Forward Current, IF -- A Ta= 75° C 25° C --0.3 --0.4 --0.5 --0.6 --0.7 10 7 5 3 2 °C --25 Ta= 25° C 75° C --0.1 7 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 --10 IT06420 7 --0.01 7 5 3 2 --0.8 --0.9 --1.0 --1.1 --1.2 --0.001 --0.2 Drain Current, ID -- A 5 3 SW Time -- ID 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V --25 °C --1.0 7 5 3 2 IT06421 VDD= --10V VGS= --4.5V 1000 Switching Time, SW Time -- ns 2 100 7 5 3 2 td(off) tf Ciss, Coss, Crss -- pF 7 5 3 2 Ciss tr td(on) Coss 100 7 5 3 Crss 10 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain Current, ID -- A --4.5 --4.0 IT06422 3 2 --10 7 5 VGS -- Qg Drain-to-Source Voltage, VDS -- V IT06423 ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --3A IDP= --12A ID= --3A