VEC2609

Ordering number : ENA0103 VEC2609 VEC2609 Features • • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications • • The best suited for inverter applications. The VEC2609 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. Low voltage drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions N-channel 30 ±20 1.4 5.6 0.8 1.0 150 --55 to +150 P-channel -12 ±8 --2 --8 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=700mA ID=700mA, VGS=10V ID=400mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 30 1 ±10 1.2 0.66 1.1 230 400 65 14 8 300 560 2.6 V µA µA V S mΩ mΩ pF pF pF Symbol Conditions Ratings min typ max Unit Marking : CF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92205PE MS IM TB-00001383 No. A0103-1/6 VEC2609 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=±6.4V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--1.5A ID=--1.5A, VGS=-4.5V ID=--0.8A, VGS=-2.5V ID=--0.4A, VGS=-1.8V VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=-2.5A VDS=--6V, VGS=--4.5V, ID=-2.5A VDS=--6V, VGS=--4.5V, ID=-2.5A IS=--2.5A, VGS=0V --0.3 2.7 4.5 87 122 162 450 100 85 15 75 64 50 6.5 0.8 2.0 --0.85 --1.5 115 172 275 --12 --10 ±10 --1.0 V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A IS=1.4A, VGS=0V Ratings min typ 5 4 11 3 2.5 0.6 0.3 0.87 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7012-002 0.25 Electrical Connection 8 0.15 7 6 5 0.3 8 7 65 0.25 1 2 2.9 3 0.65 4 1 0.75 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 2 3 4 2.8 2.3 Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 0.07 No. A0103-2/6 VEC2609 Switching Time Test Circuit [N-channel] VIN 10V 0V VIN PW=10µs D.C.≤1% ID=2.5A RL=4Ω VOUT VDD=10V 0V --4.5V VIN PW=10µs D.C.≤1% ID= --2A RL=3Ω VOUT [P-channel] VIN VDD= --6V D D G VEC2609 G P.G 50Ω S P.G 50Ω VEC2609 S 1.4 ID -- VDS 8V 5V [Nch] --3.0 ID -- VDS --3 .0 [Pch] --2 .5 V 4V 6V 1.2 10V 9V 7V Drain Current, ID -- A 1.0 Drain Current, ID -- A --2.0 --3 .5 V --2.5 V .5V --1.5 --4 0.8 V GS=3 V 8 --1. V 0.6 --1.5V --1.0 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 --0.5 VGS= --1.0V 0 --0.1 --0.2 --0.3 --0.4 --0.5 IT06894 0 Drain-to-Source Voltage, VDS -- V 1.4 IT10290 Drain-to-Source Voltage, VDS -- V --3.0 ID -- VGS [Nch] VDS=10V VDS= --6V --2.5 ID -- VGS [Pch] 1.2 Drain Current, ID -- A 1.0 Drain Current, ID -- A --2.0 0.8 --1.5 0.6 Ta=7 5 °C --25 °C --1.0 0.4 25° C 0 0 1 2 3 4 5 IT10291 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 25 --1.4 °C 0.2 --0.5 Ta =7 5°C --25 °C --1.6 --1.8 Gate-to-Source Voltage, VGS -- V 800 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 250 IT06895 [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- VGS [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 600 ID=0.7A 0.4A 200 ID= --1.5A 150 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 --0.8A --0.4A 100 50 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V IT10292 Gate-to-Source Voltage, VGS -- V IT06896 No. A0103-3/6 VEC2609 800 RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 300 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 600 500 400 300 200 100 0 --60 250 .4 I D=0 A =4V , VGS 200 I D= 150 I D=0.7 =10V A, V GS 100 V = --2.5 A, V GS = --0.8 ID = --4.5V A, V GS I D= --1.5 , VG --0.4A --1. S= 8V 50 --40 --20 0 20 40 60 80 100 120 140 160 0 --60 --40 --20 Ambient Temperature, Ta -- °C 5 IT10293 Ambient Temperature, Ta -- °C 0 20 40 60 80 100 120 140 160 IT06897 yfs -- ID [Nch] 3 yfs -- ID [Pch] VDS= --6V Forward Transfer Admittance, yfs -- S Forward Transfer Admittance, yfs -- S VDS=10V 3 2 2 10 7 5 1.0 7 5 3 2 C 5° --2 a= °C T 75 °C 25 Ta= 3 2 --25 °C 75° C C 25° 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT06898 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 3 2 1.0 7 5 IT10294 IS -- VSD Drain Current, ID -- A --10 7 5 [Nch] VGS=0V IS -- VSD [Pch] VGS=0V Source Current, IS -- A 3 2 Source Current, IS -- A 3 2 25°C --25° C Ta= 75 --1.0 7 5 3 2 3 2 0.01 7 5 3 2 0.001 0.2 0.4 0.6 0.8 1.0 1.2 IT10295 --0.1 --0.4 --0.5 --0.6 --0.7 Ta= 7 0.1 7 5 5°C 25° C --25 °C --0.8 --0.9 °C --1.0 --1.1 --1.2 Diode Forward Voltage, VSD -- V 5 3 SW Time -- ID Diode Forward Voltage, VSD -- V 5 3 IT06899 [Nch] VDD=15V VGS=10V Switching Time, SW Time -- ns SW Time -- ID [Pch] VDD= --6V VGS= --4.5V Switching Time, SW Time -- ns 2 2 td(off) 10 7 5 3 2 100 7 5 3 2 td(off) tf tr td(on) tr tf td(on) 2 3 5 7 2 3 5 7 1.0 5 7 0.1 2 3 5 7 1.0 2 3 10 --0.1 --1.0 Drain Current, ID -- A IT03300 Drain Current, ID -- A IT06902 No. A0103-4/6 VEC2609 100 7 5 Ciss, Coss, Crss -- VDS Ciss [Nch] 1000 Ciss, Coss, Crss -- VDS [Pch] f=1MHz f=1MHz 7 5 Ciss Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 3 2 3 2 Coss 10 Coss 100 7 5 3 Crss 7 5 3 0 5 10 15 20 25 30 IT03301 Crss 0 --2 --4 --6 --8 --10 --12 IT06900 Drain-to-Source Voltage, VDS -- V 10 Drain-to-Source Voltage, VDS -- V --4.5 --4.0 VGS -- Qg [Nch] VDS= --6V ID= --2.5A VGS -- Qg [Pch] Gate-to-Source Voltage, VGS -- V 8 Gate-to-Source Voltage, VGS -- V VDS=10V ID=1.4A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 IT03302 0 0 1 2 3 4 5 6 7 IT06901 Total Gate Charge, Qg -- nC 10 7 5 3 2 Total Gate Charge, Qg -- nC 2 --10 7 5 ASO IDP=5.6A 10 [Nch] ≤10µs 0µ s ASO IDP= --8A [Pch] ≤10µs 1m ID= --2A Drain Current, ID -- A Drain Current, ID -- A ID=1.4A 1.0 7 5 3 2 0.1 7 5 3 2 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 DC 0m s 10 m 1m s 10 m s s 10 0m Operation in this area is limited by RDS(on). s s 0.01 0.01 Ta=25°C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 1.2 Drain-to-Source Voltage, VDS -- V IT10296 PD -- Ta [Nch / Pch] Mounted on a ceramic board (900mm2!0.8mm) D C op at er op er ati on io n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.01 --0.01 Drain-to-Source Voltage, VDS -- V 5 7 --10 23 IT10297 Allowable Power Dissipation, PD -- W 1.0 0.8 To t 0.6 al Di ss 1u 0.4 ip nit ati on 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT10298 No. A0103-5/6 VEC2609 Note on usage : Since the VEC2609 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2005. Specifications and information herein are subject to change without notice. PS No. A0103-6/6