VEC2616

Ordering number : ENA1822 VEC2616 SANYO Semiconductors DATA SHEET VEC2616 Features • • • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications ON-resistance Nch: RDS(on)1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions N-channel 60 ±20 3 12 0.9 1.0 150 --55 to +150 P-channel --60 ±20 --2.5 --10 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7012-002 0.2 5 0.3 8 7 65 0.15 Product & Package Information • Package : VEC8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking UP 1 2 2.9 0.75 3 0.65 4 TL 2.8 2.3 Lot No. 0.25 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 Electrical Connection 8 7 6 5 0.07 1 2 3 4 http://semicon.sanyo.com/en/network 91510PE TK IM TC-00002461 No. A1822-1/6 VEC2616 Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A ID=--1.5A, VGS=--10V ID=--0.75A, VGS=--4.5V ID=--0.75A, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--2.5A VDS=--30V, VGS=--10V, ID=--2.5A VDS=--30V, VGS=--10V, ID=--2.5A IS=--2.5A, VGS=0V --1.2 3.9 105 128 138 420 54 44 6.4 9.8 65 36 11 1.4 2 --0.83 --1.2 137 180 194 --60 --1 ±10 --2.6 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=10V ID=0.75A, VGS=4.5V ID=0.75A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=3A VDS=30V, VGS=10V, ID=3A VDS=30V, VGS=10V, ID=3A IS=3A, VGS=0V 1.2 2.6 62 76 83 505 57 37 7.3 7.5 41 22 10 1.6 2.1 0.81 1.2 80 106 116 60 1 ±10 2.6 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit No. A1822-2/6 VEC2616 Switching Time Test Circuit [N-channel] 10V 0V VIN VDD=30V [P-channel] 0V --10V VIN VDD= --30V VIN PW=10μs D.C.≤1% G D ID=1.5A RL=20Ω VOUT PW=10μs D.C.≤1% VIN D ID= --1.5A RL=20Ω VOUT G P.G VEC2616 50Ω S P.G VEC2616 50Ω S 7.0V 4.5 4.0 3.5 ID -- VDS V4 .0V [Nch] 6.0 5.5 5.0 ID -- VGS VDS=10V [Nch] V 10.0V 4.5 3.5 V Drain Current, ID -- A 15.0 3.0 2.5 2.0 1.5 1.0 0.5 0 0 3.0V Drain Current, ID -- A 4.5 4.0 3.5 3.0 2.0 1.5 1.0 0.5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 2.0 2.5 --25 °C 3.0 Ta= 7 VGS=2.5V 5°C 25°C 2.5 3.5 4.0 Drain-to-Source Voltage, VDS -- V 170 160 RDS(on) -- VGS IT13789 Gate-to-Source Voltage, VGS -- V 160 150 [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta IT13790 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 150 140 130 120 110 100 90 80 70 60 50 40 30 140 130 120 110 100 90 80 70 60 50 40 30 20 --60 ID=0.75A 1.5A =4 V GS A .75 =0 , ID .5A .5V =1 =4 , ID 0V V GS 10. S= VG .0 =0 I V, D .75 A 0 2 4 6 8 10 12 14 16 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT15537 Ambient Temperature, Ta -- °C IT15538 No. A1822-3/6 VEC2616 7 | yfs | -- ID VDS=10V [Nch] Forward Transfer Admittance, | yfs | -- S 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IS -- VSD [Nch] VGS=0V 1.0 7 5 3 2 0.1 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT13793 0.01 0.2 0.4 Ta=7 5°C 25° C --25 °C 0.6 0.8 C 5° --2 = Ta °C 75 °C 25 Source Current, IS -- A 1.0 1.2 IT13794 Drain Current, ID -- A 7 5 SW Time -- ID td(off) [Nch] VDD=30V VGS=10V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V [Nch] f=1MHz Switching Time, SW Time -- ns 3 2 tf 100 7 5 3 2 10 10 7 5 3 2 0.1 td(on) tr Coss Crss 2 3 5 7 1.0 2 3 5 7 0 10 20 30 40 50 60 IT13796 Drain Current, ID -- A 10 9 VGS -- Qg IT13795 Drain-to-Source Voltage, VDS -- V 3 2 10 7 5 [Nch] ASO [Nch] Gate-to-Source Voltage, VGS -- V VDS=30V ID=3A Drain Current, ID -- A IDP=12A (PW≤10μs) ID=3A 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 3 2 1.0 7 5 3 2 0.1 7 5 3 2 DC 10 10 1m 0μs s m s 10 0m s ati on (T a= er op Operation in this area is limited by RDS(on). 25 °C ) 0.01 0.01 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 Total Gate Charge, Qg -- nC --2.5 ID -- VDS IT13797 Drain-to-Source Voltage, VDS -- V --5 [Pch] ID -- VGS 5 7 100 IT15910 [Pch] --16.0V --10 . --2.0 0V --4. 0V --3. 5V --3 .0V --6.0 VDS= --10V --4 V Drain Current, ID -- A --1.5 Drain Current, ID -- A --4 . 5V V GS= --2.5V --3 --1.0 --2 --0.5 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 --1.5 Ta= 75° C --25 °C --2.0 --2.5 25° C --3.0 --3.5 Drain-to-Source Voltage, VDS -- V IT15911 Gate-to-Source Voltage, VGS -- V IT15912 No. A1822-4/6 VEC2616 300 RDS(on) -- VGS ID= --1.5A --0.75A [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 300 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 250 200 200 150 150 100 100 75A --0. I D= 0V, 75A --0. --4. I D= S= , .5A VG 4.5V I = --1 = -,D VGS --10.0V = VGS 50 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 2 | yfs | -- ID IT15913 Ambient Temperature, Ta -- °C 7 5 3 2 [Pch] VDS= --10V IS -- VSD IT15914 Forward Transfer Admittance, | yfs | -- S [Pch] VGS=0V 10 7 Source Current, IS -- A 5 3 2 1.0 7 5 3 2 0.1 --0.01 7 5 °C 25 2 --0.1 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --0.01 --0.2 --0.4 Ta= 75°C --0.6 25°C °C --25° C --0.8 = Ta 5°C --2 --1.0 7 5 3 --1.0 --1.2 IT15916 Drain Current, ID -- A 2 SW Time -- ID td(off) IT15915 Switching Time, SW Time -- ns 100 7 5 [Pch] VDD= --30V VGS= --10V Ciss, Coss, Crss -- pF 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [Pch] f=1MHz 1000 7 5 3 2 tf 3 2 Ciss 10 7 5 3 2 --0.1 2 3 td(on) tr 100 7 5 3 Coss Crss 0 --5 --10 --15 --20 --25 --30 --35 --40 --45 --50 --55 --60 5 7 --1.0 2 3 5 7 2 Drain Current, ID -- A --10 --9 VGS -- Qg IT15917 Drain-to-Source Voltage, VDS -- V 2 --10 7 5 [Pch] ASO IT15918 [Pch] Gate-to-Source Voltage, VGS -- V VDS= --30V ID= --2.5A Drain Current, ID -- A IDP= --10A (PW≤10μs) 10 s 1m ID= --2.5A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 11 0μ 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 s 10 op er at io n 10 m 0m s Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 5 7--0.1 23 5 7--1.0 2 3 D C s 2 a= (T C 5° ) --0.01 --0.01 2 3 5 7--10 23 Total Gate Charge, Qg -- nC IT15919 Drain-to-Source Voltage, VDS -- V 57 --100 IT15920 No. A1822-5/6 VEC2616 1.2 PD -- Ta [Nch/Pch] Allowable Power Dissipation, PD -- W When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.9 0.8 To t al 0.6 di ss 1u 0.4 ip nit ati on 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT15921 Note on usage : Since the VEC2616 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2010. Specifications and information herein are subject to change without notice. PS No. A1822-6/6