VEC2801

Ordering number : EN9078 VEC2801 SANYO Semiconductors DATA SHEET VEC2801 Features • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications The best suited for DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit --12 ±8 --3 --12 0.9 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : BL Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 61009PE MS IM TC-00001990 No.9078-1/6 VEC2801 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF IR C trr Rth(j-a) IR=1mA IF=1A VR=6V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (900mm2✕0.8mm) 15 0.35 45 15 70 0.45 500 V V μA pF ns °C / W V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID= --1mA, VGS=0 VDS= --12V, VGS=0 VGS=±6.4V, VDS=0 VDS= -6V, ID= --1mA VDS= --6V, ID= -1.5A ID= --3A, VGS= -4.5V ID= --1.5A, VGS= -2.5V ID= --0.3A, VGS= -1.8V VDS= --6V, f=1MHz VDS= --6V, f=1MHz VDS= --6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS= -6V, VGS= -4.5V, ID= -3A VDS= -6V, VGS= -4.5V, ID= -3A VDS= -6V, VGS= -4.5V, ID= -3A IS= --3A, VGS=0 --12 --1 ±10 --0.3 4.2 6 47 64 85 940 230 180 14 84 104 106 11 1.6 2.8 -0.85 --1.2 62 89 122 --1.3 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm (typ) 7012-004 0.25 Electrical Connection 8 7 6 5 0.3 8 7 65 0.15 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode Top view 2.8 2.3 0.25 1 2 2.9 3 0.65 4 1 2 3 4 0.75 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 0.07 No.9078-2/6 VEC2801 Switching Time Test Circuit [MOSFET] VIN 0V --4.5V VIN ID= --1.5A RL=4Ω 50Ω 10μs --5V 100Ω 10Ω trr Test Circuit [SBD] VDD= --6V Duty≤10% 100mA 10mA D PW=10μs D.C.≤1% VOUT G 100mA trr VEC2801 P.G 50Ω S --4.5V --3.5V --3.0 V --3.0 ID -- VDS --1.8V --2.5 V [MOSFET] --6 ID -- VGS VDS= --6V [MOSFET] --2.5 --5 Drain Current, ID -- A Drain Current, ID -- A --1.5 --1.5 V --2.0 --4 --3 --1.0 Ta= 7 --0.5 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT08898 Drain-to-Source Voltage, VDS -- V [MOSFET] RDS(on) -- VGS 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 IT08899 Gate-to-Source Voltage, VGS -- V [MOSFET] RDS(on) -- Ta 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 120 100 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.5A --3.0A Ta=25°C 120 --25 °C A 80 100 100 --1.8 V GS= 80 --0.3 V, I D= ID= --0.3A 80 60 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 --8 60 1.5A , I = -= --2.5V D V GS 3.0A .5V, I D= -V GS= --4 40 20 0 --60 --40 --20 0 20 40 60 25°C 120 5°C VGS= --1.0V --2 140 160 Gate-to-Source Voltage, VGS -- V IT08943 Ambient Temperature, Ta -- °C IT08901 No.9078-3/6 VEC2801 3 ⏐yfs⏐ -- ID VDS= --6V [MOSFET] Forward Transfer Admittance, ⏐yfs⏐ -- S 2 10 5 3 2 1.0 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 IS -- VSD [MOSFET] VGS=0V = Ta 5°C --2 °C C 25° 75 Source Current, IS -- A 7 Ta= 75° C --0.1 7 5 3 2 25 ° C --0.6 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 3 5 7 --10 IT03869 --0.01 --0.2 --0.4 --25° C --0.8 --1.0 --1.2 IT08902 SW Time -- ID [MOSFET] VDD= --6V VGS= --4.5V 2 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 2 Ciss, Coss, Crss -- pF 100 7 5 3 2 td (off) tf 1000 7 5 Ciss tr 3 Coss 2 td(on) Crss 10 7 --0.1 100 2 3 5 7 --1.0 2 3 5 IT08903 0 --2 --4 --6 --8 --10 --12 Drain Current, ID -- A --4.5 --4.0 VGS -- Qg [MOSFET] 3 2 --10 7 5 IT03872 Drain-to-Source Voltage, VDS -- V [MOSFET] ASO Gate-to-Source Voltage, VGS -- V VDS= --6V ID= --3A IDP= --12A ID= --3A DC †10μs 1 10 ms ms --3.5 Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 2 4 6 8 10 12 IT08904 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 op 0m s n era tio Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 --0.01 --0.01 Total Gate Charge, Qg -- nC 1.0 PD -- Ta M ou Drain-to-Source Voltage, VDS -- V IT08905 [MOSFET] Allowable Power Dissipation, PD -- W 0.9 0.8 nt ed on ac 0.6 er am ic bo ar d 0.4 (9 00 m m2 ✕ 0. 8m 0.2 m )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C IT08906 No.9078-4/6 VEC2801 2 1.0 7 IF -- VF From Top Ta=125°C 100°C 75°C 50°C 25°C [SBD] 100 7 5 3 2 IR -- VR 2 Ta=1 5 °C [SBD] Reverse Current, IR -- mA Forward Current, IF -- A 5 3 2 0.1 7 5 3 2 0.01 0 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 5 100°C 75°C 50°C 25°C 0.1 0.2 0.3 0.4 0.5 IT02957 10 15 IT02958 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 PF(AV) -- IO Reverse Voltage, VR -- V 3 2 [SBD] C -- VR [SBD] f=1MHz Interterminal Capacitance, C -- pF 1.4 IT02959 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave (1) θ 360° 100 7 5 3 2 10 7 5 3 2 1.0 1.0 (2) (4) (3) Sine wave 180° 360° 0.2 0.4 0.6 0.8 1.0 1.2 2 3 5 7 10 2 IT02960 Average Output Current, IO -- A 12 IFSM -- t IS Reverse Voltage, VR -- V [SBD] Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 10 8 20ms t 6 4 2 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s IT00636 No.9078-5/6 VEC2801 Note on usage : Since the VEC2801 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2009. Specifications and information herein are subject to change without notice. PS No.9078-6/6