2SA1770S-AN

Ordering number : EN3578A 2SA1770/2SC4614 Bipolar Transistor http://onsemi.com (–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings Unit VCBO VCEO (--)180 (--)160 V VEBO IC (--)6 V (--)1.5 A Collector Dissipation ICP PC Junction Temperature Tj Storage Temperature Tstg V (--)2.5 A 1 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7540-001 • Package : NMP(Taping) • JEITA, JEDEC : SC-71 • Minimum Packing Quantity : 2,500 pcs./box 2.5 6.9 1.05 2SA1770S-AN 2SA1770T-AN 2SC4614S-AN 2SC4614T-AN 1.0 4.5 1.0 1.45 Marking(NMP(Taping)) A1770 RANK C4614 LOT No. RANK LOT No. 0.6 1.0 0.5 15.0 0.9 1 2.54 2 3 0.45 2.54 1 : Emitter 2 : Collector 3 : Base NMP(Taping) Electrical Connection 2 3 2 3 1 2SA1770 Semiconductor Components Industries, LLC, 2013 August, 2013 1 2SC4614 82212 TKIM TC-00002805/90503TN (KT)/83198HA (KT)/6040TA (CQ) No.3578-1/7 2SA1770 / 2SC4614 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE1 Emitter Cutoff Current DC Current Gain hFE2 Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ VCB=(--)120V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)100mA VCE=(--)5V, IC=(--)10mA 140* max Unit (--)1 μA (--)1 μA 400* 80 VCE=(--)10V, IC=(--)50mA 120 VCB=(--)10V, f=1MHz MHz (22)14 VCE(sat) VBE(sat) IC=(--)500mA, IB=(--)50mA V(BR)CBO V(BR)CEO IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. pF (--200)130 (--500)450 (--)0.85 (--)1.2 (--)180 mV V V (--)160 V (--)6 V 40(40) ns (0.7)1.2 μs (40)80 ns * : The 2SA1770/2SC4614 are classified by 100mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Switching Time Test Circuit 2SA1770 2SC4614 IB1 IB2 PW=20μs D.C.≤1% VR RB + 50Ω 100μF VBE=5V IB2 OUTPUT INPUT RL + IB1 PW=20μs D.C.≤1% VR RB + 50Ω 470μF OUTPUT INPUT 100μF VCC= --100V IC=10IB1= --10IB2= --0.7A VBE= --5V + RL 470μF VCC=100V IC=10IB1= --10IB2=0.7A Ordering Information Package Shipping 2SA1770S-AN Device NMP(Taping) 2,500pcs./box 2SA1770T-AN NMP(Taping) 2,500pcs./box 2SC4614S-AN NMP(Taping) 2,500pcs./box 2SC4614T-AN NMP(Taping) 2,500pcs./box memo Pb Free No.3578-2/7 2SA1770 / 2SC4614 IC -- VCE --1.8 --1.2 Collector Current, IC -- A A --20m --10mA --5mA --1.0 --0.8 --0.6 --0.4 --2mA --0.2 --1mA --1 --2 --3 --4 --1.5mA --1.0mA --0.2 2mA 0.4 1mA IB=0 0 1 2 3 4 A 4.0m A 3.5m m 3.0 A 0.8 2SC4614 4.5mA 2.5mA 0.6 2.0mA 0.4 1.5mA 1.0mA 0.2 --0.5mA 0 0.5mA IB=0 0 --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V IB=0 0 --50 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 0.2 0.4 Ta=75°C --25°C 7 5 3 2 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 ITR04576 hFE -- IC 2SC4614 VCE=5V 7 5 DC Current Gain, hFE 5 25°C 0.4 1000 7 2 0.8 ITR04575 2SA1770 VCE=--5V 3 1.2 0 --1.2 hFE -- IC 1000 DC Current Gain, hFE 50 ITR04574 Ta= 75°C 25°C --25°C Collector Current, IC -- A Ta= 75°C 25°C --25°C Collector Current, IC -- A --0.4 10 40 2SC4614 VCE=5V --0.8 100 30 IC -- VBE 1.6 --1.2 0 20 Collector-to-Emitter Voltage, VCE -- V 2SA1770 VCE=--5V 0 10 ITR04573 IC -- VBE --1.6 5 ITR04572 IC -- VCE 1.0 5. 0 --2.0mA --0.4 0.6 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A A --5.0m A .5 --4 m A --4.0m A m .5 3 ---3.0mA --2.5mA --0.6 10mA 5mA 0.8 ITR04571 2SA1770 --0.8 20mA 0 --5 IC -- VCE --1.0 1.0 0.2 IB=0 0 1.2 50mA 40mA 30mA 1.4 m A Collector Current, IC -- A --80mA A --60m A --40m --1.4 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A 2SC4614 1.6 --1.6 0 IC -- VCE 1.8 2SA1770 3 Ta=75°C 25°C 2 --25°C 100 7 5 3 2 5 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 3 ITR04577 10 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR04578 No.3578-3/7 2SA1770 / 2SC4614 f T -- IC 3 2SC4614 2 2SA1770 100 7 5 3 2 (For PNP, minus sign is omitted.) 10 0.01 2 3 5 7 3 5 Collector Current, IC -- A VCE(sat) -- IC 7 --1000 7 5 3 2 °C 25 --100 7 5°C Ta=7 °C --25 5 3 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 Ta=--25°C 7 75°C 3 25°C 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 op era tio 0.1 7 5 n 3 2 0.01 7 5 3 Single pulse Ta=25°C (For PNP, minus sign is omitted.) 5 7 1.0 2 3 5 7 5 10 2 3 5 7 100 Collector-to-Emitter Voltage, VCE -- V 2 7 2 10 3 5 VCE(sat) -- IC 3 ITR04585 7 100 ITR04580 2SC4614 IC / IB=10 1000 7 5 3 2 100 25 7 °C Ta=75°C 5 C --25° 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 ITR04582 VBE(sat) -- IC 2SC4614 IC / IB=10 5 3 2 1.0 Ta=--25°C 7 75°C 5 7 0.01 2 3 5 25°C 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A Collector Dissipation, PC -- W DC 3 PC -- Ta 1.2 s 3 2 2 2 3 3 1m 10 10m 0m s s 1.0 7 5 5 Collector Current, IC -- A 2SA1770 / 2SC4614 ICP=2.5A IC=1.5A 3 2 7 ITR04583 ASO 5 10 7 2 2 4 10 3 7 --0.01 461 2 3 5 3 Collector Current, IC -- A 2 2SA1770 IC / IB=10 5 0 2SC ITR04581 VBE(sat) -- IC --1.0 177 2 3 Collector Current, IC -- A --10 2SA Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 3 2SA1770 IC / IB=10 2 5 3 1.0 2 1.0 ITR04579 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2SA1770 / 2SC4614 7 (For PNP, minus sign is omitted.) 2 0.1 f T -- IC 100 2SA1770 / 2SC4614 Gain-Bandwidth Product, f T -- MHz Gain-Bandwidth Product, f T -- MHz 5 2 3 ITR04584 2SA1770 / 2SC4614 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR04586 No.3578-4/7 2SA1770 / 2SC4614 Bag Packing Specification 2SA1770S-AN, 2SA1770T-AN, 2SC4614S-AN, 2SC4614T-AN No.3578-5/7 2SA1770 / 2SC4614 Outline Drawing 2SA1770S-AN, 2SA1770T-AN, 2SC4614S-AN, 2SC4614T-AN Mass (g) Unit 0.275 mm * For reference No.3578-6/7 2SA1770 / 2SC4614 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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