2SJ652

Ordering number : ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • • Package Dimensions unit : mm 2063A [2SJ652] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 123 2.55 2.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings --60 ±20 --28 --112 2.0 30 150 --55 to +150 Unit V V A A W W °C °C 2.55 2.55 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-60V, VGS=0 VGS=± 16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-14A Ratings min --60 --1 ± 10 -1.2 18 26 --2.6 typ max Unit V µA µA V S Marking : J652 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72503 TS IM TA-4245 No.7625-1/4 2SJ652 Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--14A, VGS=-10V ID=--14A, VGS=-4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--30V, VGS=-10V, ID=--28A VDS=--30V, VGS=-10V, ID=--28A VDS=--30V, VGS=-10V, ID=--28A IS=--28A, VGS=0 Ratings min typ 28.5 39 4360 470 335 33 210 310 180 80 15 12 --0.96 --1.2 max 38 55.5 Unit mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --14A RL=2.1Ω VDD= --30V D VOUT G 2SJ652 P.G 50Ω S --50 ID -- VDS --10 V --6V Tc=25°C --50 ID -- VGS 25 °C --1.5 --2.0 --2.5 --4V --40 VDS= --10V --40 Drain Current, ID -- A Drain Current, ID -- A --30 --30 --20 --20 --10 --10 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 0 --0.5 --1.0 --3.0 --3.5 --4.0 --4.5 --5.0 Drain-to-Source Voltage, VDS -- V IT06535 Gate-to-Source Voltage, VGS -- V Tc= --25 ° 75 °C C VGS= --3V °C 25 Tc= -- 25°C 75°C IT06536 No.7625-2/4 2SJ652 100 RDS(on) -- VGS ID= --14A 70 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 80 50 60 40 40 Tc=75°C 25°C --25°C 30 4V = -V GS A, --14 0V I D= = --1 , VGS --14A I D= 20 20 10 0 --50 0 --2 --3 --4 --5 --6 --7 --8 --9 --10 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID IT06537 7 5 3 2 Case Temperature, Tc -- °C IT06538 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS= --10V C 75° C 25° Forward Current, IF -- A 5 --2 Tc= °C --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 7 5 3 2 °C 25°C 1.0 --0.1 --0.01 7 5 3 2 --0.001 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 0 --0.3 Tc=7 5 --0.6 --25°C --0.9 --1.2 --1.5 IT06540 Drain Current, ID -- A 7 5 IT06539 7 5 3 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 3 2 Ciss, Coss, Crss -- pF 2 tf 100 7 5 3 2 1000 7 5 3 2 tr td(on) Coss Crss 10 --0.1 VDD= --30V VGS= --10V 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 100 0 --5 --10 --15 --20 --25 --30 IT06542 Drain Current, ID -- A --10 --9 IT06541 3 2 --100 7 5 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO IDP= --112A ID= --28A 10 Gate-to-Source Voltage, VGS -- V --8 Drain Current, ID -- A --7 --6 --5 --4 --3 --2 --1 0 0 10 20 30 40 50 60 70 80 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 1m ms