2SK2632LS

2SK2632LS Ordering number : EN5531C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2632LS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 800 V ±30 V ID 2.5 A 7.5 A 2.0 W Drain Current (Pulse) IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature PW≤10μs, duty cycle≤1% Tc=25°C 25 W Tch 150 °C Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : K2632 Symbol V(BR)DSS IDSS Conditions ID=1mA, VGS=0V Ratings min typ max 800 V VDS=800V, VGS=0V 1.0 IGSS VGS(off) VGS=±30V, VDS=0V VDS=10V, ID=1mA 3.5 ⏐yfs⏐ RDS(on) VDS=10V, ID=1.3A 0.7 ID=1.3A, VGS=15V Unit ±100 5.5 V 4.8 Ω 1.4 3.6 mA nA S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 10908QB TI IM TC-00001123 / N2000TS (KOTO) TA-3034 No.5531-1/4 2SK2632LS Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge td(on) tr Rise Time Turn-OFF Delay Time min typ VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Qg Turn-ON Delay Time Ratings Conditions Unit max 550 pF 150 pF 70 pF VDS=200V, ID=2.5A, VGS=10V See specified Test Circuit. 15 nC 15 ns See specified Test Circuit. 15 ns See specified Test Circuit. 45 ns Fall Time td(off) tf See specified Test Circuit. Diode Forward Voltage VSD IS=2.5A, VGS=0V 23 ns 0.84 Package Dimensions 1.2 V Switching Time Test Circuit unit : mm (typ) 7509-002 PW=1μs D.C.≤0.5% VDD=200V 4.5 10.0 3.2 ID=1.3A RL=154Ω 2.8 7.2 3.5 VGS=15V D G 0.6 16.1 16.0 VOUT 1.2 14.0 3.6 0.9 1.2 0.75 S 1 : Gate 2 : Drain 3 : Source 2.4 1 2 3 2.55 SANYO : TO-220FI(LS) 2.55 ID -- VDS 6 2SK2632LS RGS=50Ω P.G 0.7 ID -- VGS 4.0 VDS=10V 15V Tc= --25°C 3.5 5 Drain Current, ID -- A Drain Current, ID -- A 10V 4 8V 3 2 7V 3.0 25°C 2.5 2.0 75°C 1.5 1.0 1 VGS=6V 0 0.5 0 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT00743 0 5 10 15 Gate-to-Source Voltage, VGS -- V 20 IT00744 No.5531-2/4 2SK2632LS RDS(on) -- VGS 10 RDS(on) -- Tc 10 Tc=25°C 9 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 8 7 6 ID =2.5A 1.3A 4 0.5A 3 2 1 0 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V C 5° --2 1.0 7 5°C 5 2 C 75° 3 2 0.1 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A Switching Time, SW Time -- ns 10 IT00747 3 2 td(off) 3 tf 2 td(on) 10 7 5 tr 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 5 3 2 0 5 10 15 20 Drain-to-Source Voltage, VDS -- V 25 30 IT00751 125 150 IT00746 3 2 1 0 50 100 150 IT00748 IS -- VSD 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 VGS=0V 0.1 7 5 3 2 0.01 7 5 3 2 0.001 3 2 0.2 0.4 0.6 0.8 1.0 1.2 IT00750 Forward Bias A S O IDP=7.5A