2SK3702

Ordering number : ENN7502 2SK3702 N-Channel Silicon MOSFET 2SK3702 DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2063A [2SK3702] 4.5 2.8 5.6 18.1 16.0 3.2 3.5 7.2 10.0 2.4 14.0 1.6 1.2 0.7 0.75 1 2 3 2.55 1 : Gate 2 : Drain 3 : Source 2.4 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta=25°C Parameter Symbol 2.55 SANYO : TO-220ML Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V ID 18 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 72 A 2.0 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=9A Ratings min typ Unit max 60 V 1 ±10 1.2 8 Marking : K3702 2.6 12 µA µA V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71003 TS IM TA-100558 No.7502-1/4 2SK3702 Continued from preceding page. Ratings Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=9A, VGS=10V ID=9A, VGS=4V Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 775 Output Capacitance 125 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 105 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr td(off) See specified Test Circuit. 65 ns See specified Test Circuit. 75 ns tf See specified Test Circuit. 70 ns Turn-OFF Delay Time Fall Time Conditions min typ Unit max 42 55 mΩ 60 85 mΩ Total Gate Charge Qg VDS=30V, VGS=10V, ID=18A 19 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=18A 2.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=18A 4.1 Diode Forward Voltage VSD IS=18A, VGS=0 nC 0.98 1.2 V Switching Time Test Circuit VDD=30V VIN 10V 0V ID=9A RL=3.33Ω VIN D VOUT PW=10µs D.C.≤1% G 2SK3702 50Ω S 15 10 VGS=3V C 25° 10 °C °C 25 ° 5 0 Tc =7 5 5 15 C 4V 20 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V 4.5 5.0 IT06197 0 1 2 --2 5 Drain Current, ID -- A 25 Tc= 25 30 C C V 6V 10 VDS=10V 8V 35 Drain Current, ID -- A ID -- VGS 30 Tc=25°C 75° ID -- VDS 40 --25° P.G 3 4 Gate-to-Source Voltage, VGS -- V 5 6 IT06198 No.7502-2/4 2SK3702 RDS(on) -- VGS 120 100 80 Tc= 75°C 60 25°C --25°C 40 20 0 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 60 40 20 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 IT06200 yfs -- ID VDS=10V 3 2 25° 5°C C 10 -2 =- Tc 7 75° C 5 3 2 1.0 --25 0 25 50 75 100 125 3 2 150 5 7 2 1.0 3 5 7 VDD=30V VGS=10V 7 Switching Time, SW Time -- ns 5 Tc= 75°C 25°C --25°C 1.0 7 5 3 2 0.1 7 5 3 2 3 IT06202 SW Time -- ID 1000 VGS=0 10 7 5 3 2 2 10 Drain Current, ID -- A IT06201 IF -- VSD 100 7 5 3 2 3 2 td(off) 100 7 tf 5 3 tr 2 td(on) 10 7 5 0.1 0.01 0 0.3 0.6 0.9 1.2 1.5 Diode Forward Voltage, VSD -- V 5 7 1.0 Gate-to-Source Voltage, VGS -- V 7 5 3 2 Coss Crss 3 5 7 10 2 3 5 7 100 IT06204 VDS=30V ID=18A 9 Ciss 2 VGS -- Qg 10 f=1MHz 100 3 Drain Current, ID -- A 2 1000 2 IT06203 Ciss, Coss, Crss -- VDS 3 Ciss, Coss, Crss -- pF --25 Case Temperature, Tc -- °C Forward Transfer Admittance, yfs -- S Cutoff Voltage, VGS(off) -- V =4V GS V , 9A I D= =10V , VGS A 9 I D= 80 5 Case Temperature, Tc -- °C Forward Current, IF -- A 100 IT06199 VDS=10V ID=1mA 0 --50 120 0 --50 10 VGS(off) -- Tc 2.5 RDS(on) -- Tc 140 ID=9A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 8 7 6 5 4 3 2 1 7 0 5 0 5 10 15 20 Drain-to-Source Voltage, VDS -- V 25 30 IT06205 0 5 10 15 Total Gate Charge, Qg -- nC 20 IT06206 No.7502-3/4 2SK3702 ASO IDP=72A Drain Current, ID -- A 100 7 5