2SK4085LS-1E

Ordering number : ENA0553E 2SK4085LS N-Channel Power MOSFET http://onsemi.com 500V, 16A, 430mΩ, TO-220F-3FS Features • • • ON-resistance RDS(on)=0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (Pulse) V ±30 V Limited only by maximum temperature Tch=150°C 16 A IDpack *2 Tc=25°C (Our ideal heat dissipation condition)*3 11 A IDP PW≤10μs, duty cycle≤1% 60 A 2.0 W IDc *1 Drain Current (DC) Unit 500 Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 141 mJ 16 A Avalanche Current *5 Tc=25°C (Our ideal heat dissipation condition)*3 *1 Shows chip capability. *2 Package limited. *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=1mH, IAV=16A (Fig.1) *5 L≤1mH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7528-001 • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 4.7 10.16 3.18 2SK4085LS-1E Marking Electrical Connection 6.68 3.3 2.54 3.23 15.8 15.87 2 K4085 LOT No. 1 12.98 2.76 1.47 MAX 0.8 3 1 2.54 2 3 0.5 2.54 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source TO-220F-3FS 62712 TKIM/40412 TC-00002743/O1007 TIIM TC-00000927/ No. A0553-1/7 40407QB TIIM TC-00000628/22107QB TIIM TC-00000556 2SK4085LS Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol V(BR)DSS IDSS ID=10mA, VGS=0V VDS=400V, VGS=0V VGS=±30V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on) Input Capacitance Ciss Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time td(on) tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD min. typ. V 100 μA ±100 nA 3 VDS=10V, ID=8A ID=8A, VGS=10V 5 4.5 9 See Fig.2 VDS=200V, VGS=10V, ID=16A 0.43 Ω 1200 pF 250 pF 55 pF 26.5 ns 78 ns 146 ns 57 ns 46.6 nC 8.2 nC 27.4 IS=16A, VGS=0V V S 0.33 VDS=30V, f=1MHz nC 0.95 1.3 V Fig.2 Switching Time Test Circuit VIN L VDD=200V 10V 0V ≥50Ω RG ID=8A RL=25Ω VIN D 2SK4085LS VDD 50Ω Unit max. 500 VDS=10V, ID=1mA Fig.1 Avalanche Resistance Test Circuit 10V 0V Ratings Conditions VOUT PW=10μs D.C.≤0.5% G 2SK4085LS P.G RGS=50Ω S Ordering Information Device 2SK4085LS-1E Package Shipping memo TO-220F-3FS 50pcs./magazine Pb Free No. A0553-2/7 2SK4085LS ID -- VDS Drain Current, ID -- A 35 8V 25 20 15 10 10 15 20 25 Tc=75°C 0.4 25°C --25°C 0.2 9 11 13 5 5°C = Tc 3 --2 2 °C 75 1.0 7 0.6 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 0.5 5 20 IT11733 =1 S , VG 0.3 0.2 0.1 --25 0 25 50 75 100 125 150 IT11735 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.01 0.2 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 10000 7 5 VDD=200V VGS=10V 7 18 A =8 ID 0.4 IT11736 SW Time -- ID 1000 3 16 0V 3 2 5 3 0.1 14 3 2 °C 25 7 12 0.7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 2 10 Case Temperature, Tc -- °C VDS=10V 10 8 0.8 IT11734 | yfs | -- ID 3 6 RDS(on) -- Tc 0 --50 15 Gate-to-Source Voltage, VGS -- V 1.4 IT11737 f=1MHz 3 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.6 7 4 0.9 0.8 5 2 1.0 1.0 3 0 Gate-to-Source Voltage, VGS -- V ID=8A 0 15 IT11732 RDS(on) -- VGS 1.2 20 0 30 Drain-to-Source Voltage, VDS -- V 25 5 VGS=5V 5 75°C 10 6V 0 30 --25°C 30 5 Tc= --25°C 25°C 40 10V 35 Drain Current, ID -- A VDS=20V 15V 40 0 ID -- VGS 45 Tc=25°C Tc=7 5°C 25°C 45 td (off) 2 100 7 tf tr 5 ëtd(on) 3 2 ëCiss 1000 7 5 Cossë 3 2 100 7 5 Crsës 3 2 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 IT11738 10 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT11739 No. A0553-3/7 2SK4085LS VGS -- Qg 10 9 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 VDS=200V ID=16A 7 6 5 4 3 2 1 0 0 10 20 40 30 1.0 0.5 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % 160 IT11730 EAS -- Ta 120 1.0 7 5 3 2 0.1 7 5 3 2 μs 0μ s 1m s *1. Shows chip capability *2. Our ideal heat dissipation condition Tc=25°C 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.5 10 1 10 0ms DC 0m IDpack(*2)=11A s op era tio n Operation in this area is limited by RDS(on). PD -- Tc 45 2.0 0 10 7 5 3 2 IT11740 PD -- Ta 2.5 10 IDP=60A(PW≤10μs) IDc(*1)=16A 0.01 Single pulse 2 3 5 7 10 1.0 50 Total Gate Charge, Qg -- nC ASO 3 5 71000 IT16814 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11742 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0553-4/7 2SK4085LS Magazine Specification 2SK4085LS-1E No. A0553-5/7 2SK4085LS Outline Drawing 2SK4085LS-1E Mass (g) Unit 1.8 mm * For reference No. A0553-6/7 2SK4085LS Note on usage : Since the 2SK4085LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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