Ordering number : ENA0553E
2SK4085LS
N-Channel Power MOSFET
http://onsemi.com
500V, 16A, 430mΩ, TO-220F-3FS
Features
•
•
•
ON-resistance RDS(on)=0.33Ω (typ.)
Input capacitance Ciss=1200pF (typ.)
10V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (Pulse)
V
±30
V
Limited only by maximum temperature Tch=150°C
16
A
IDpack *2
Tc=25°C (Our ideal heat dissipation condition)*3
11
A
IDP
PW≤10μs, duty cycle≤1%
60
A
2.0
W
IDc *1
Drain Current (DC)
Unit
500
Allowable Power Dissipation
PD
40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
IAV
141
mJ
16
A
Avalanche Current *5
Tc=25°C (Our ideal heat dissipation condition)*3
*1 Shows chip capability.
*2 Package limited.
*3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=1mH, IAV=16A (Fig.1)
*5 L≤1mH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7528-001
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
4.7
10.16
3.18
2SK4085LS-1E
Marking
Electrical Connection
6.68
3.3
2.54
3.23
15.8
15.87
2
K4085
LOT No.
1
12.98
2.76
1.47 MAX
0.8
3
1
2.54
2
3
0.5
2.54
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
62712 TKIM/40412 TC-00002743/O1007 TIIM TC-00000927/ No. A0553-1/7
40407QB TIIM TC-00000628/22107QB TIIM TC-00000556
2SK4085LS
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Symbol
V(BR)DSS
IDSS
ID=10mA, VGS=0V
VDS=400V, VGS=0V
VGS=±30V, VDS=0V
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)
Input Capacitance
Ciss
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Rise Time
td(on)
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
min.
typ.
V
100
μA
±100
nA
3
VDS=10V, ID=8A
ID=8A, VGS=10V
5
4.5
9
See Fig.2
VDS=200V, VGS=10V, ID=16A
0.43
Ω
1200
pF
250
pF
55
pF
26.5
ns
78
ns
146
ns
57
ns
46.6
nC
8.2
nC
27.4
IS=16A, VGS=0V
V
S
0.33
VDS=30V, f=1MHz
nC
0.95
1.3
V
Fig.2 Switching Time Test Circuit
VIN
L
VDD=200V
10V
0V
≥50Ω
RG
ID=8A
RL=25Ω
VIN
D
2SK4085LS
VDD
50Ω
Unit
max.
500
VDS=10V, ID=1mA
Fig.1 Avalanche Resistance Test Circuit
10V
0V
Ratings
Conditions
VOUT
PW=10μs
D.C.≤0.5%
G
2SK4085LS
P.G
RGS=50Ω
S
Ordering Information
Device
2SK4085LS-1E
Package
Shipping
memo
TO-220F-3FS
50pcs./magazine
Pb Free
No. A0553-2/7
2SK4085LS
ID -- VDS
Drain Current, ID -- A
35
8V
25
20
15
10
10
15
20
25
Tc=75°C
0.4
25°C
--25°C
0.2
9
11
13
5
5°C
=
Tc
3
--2
2
°C
75
1.0
7
0.6
2
3
5
7 1.0
2
3
5
7 10
2
Drain Current, ID -- A
0.5
5
20
IT11733
=1
S
, VG
0.3
0.2
0.1
--25
0
25
50
75
100
125
150
IT11735
IS -- VSD
VGS=0V
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
0.01
0.2
5
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
10000
7
5
VDD=200V
VGS=10V
7
18
A
=8
ID
0.4
IT11736
SW Time -- ID
1000
3
16
0V
3
2
5
3
0.1
14
3
2
°C
25
7
12
0.7
5
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
2
10
Case Temperature, Tc -- °C
VDS=10V
10
8
0.8
IT11734
| yfs | -- ID
3
6
RDS(on) -- Tc
0
--50
15
Gate-to-Source Voltage, VGS -- V
1.4
IT11737
f=1MHz
3
3
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
0.6
7
4
0.9
0.8
5
2
1.0
1.0
3
0
Gate-to-Source Voltage, VGS -- V
ID=8A
0
15
IT11732
RDS(on) -- VGS
1.2
20
0
30
Drain-to-Source Voltage, VDS -- V
25
5
VGS=5V
5
75°C
10
6V
0
30
--25°C
30
5
Tc= --25°C
25°C
40
10V
35
Drain Current, ID -- A
VDS=20V
15V
40
0
ID -- VGS
45
Tc=25°C
Tc=7
5°C
25°C
45
td (off)
2
100
7
tf
tr
5
ëtd(on)
3
2
ëCiss
1000
7
5
Cossë
3
2
100
7
5
Crsës
3
2
2
10
0.1
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5
7
IT11738
10
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT11739
No. A0553-3/7
2SK4085LS
VGS -- Qg
10
9
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
100
7
5
3
2
VDS=200V
ID=16A
7
6
5
4
3
2
1
0
0
10
20
40
30
1.0
0.5
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
Avalanche Energy derating factor -- %
160
IT11730
EAS -- Ta
120
1.0
7
5
3
2
0.1
7
5
3
2
μs
0μ
s
1m
s
*1. Shows chip capability
*2. Our ideal heat dissipation condition
Tc=25°C
2
3
5 7 100
2
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1.5
10
1
10 0ms
DC
0m
IDpack(*2)=11A
s
op
era
tio
n
Operation in this area
is limited by RDS(on).
PD -- Tc
45
2.0
0
10
7
5
3
2
IT11740
PD -- Ta
2.5
10
IDP=60A(PW≤10μs)
IDc(*1)=16A
0.01 Single pulse
2 3
5 7 10
1.0
50
Total Gate Charge, Qg -- nC
ASO
3
5 71000
IT16814
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT11742
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A0553-4/7
2SK4085LS
Magazine Specification
2SK4085LS-1E
No. A0553-5/7
2SK4085LS
Outline Drawing
2SK4085LS-1E
Mass (g) Unit
1.8
mm
* For reference
No. A0553-6/7
2SK4085LS
Note on usage : Since the 2SK4085LS is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0553-7/7