2SK4094

Ordering number : ENA0523 2SK4094 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4094 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Load switching applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 100 400 1.75 90 150 --55 to +150 850 70 Unit V V A A W W °C °C mJ A Note : *1 VDD=30V, L=200µH, IAV=70A *2 L≤200µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=50A ID=50A, VGS=10V ID=50A, VGS=4V Ratings min 60 1 ±10 1.2 45 75 3.8 4.9 5.0 7.0 2.6 typ max Unit V µA µA V S mΩ mΩ Marking : K4094 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806QA SY IM TC-00000295 No. A0523-1/5 2SK4094 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=100A VDS=30V, VGS=10V, ID=100A VDS=30V, VGS=10V, ID=100A IS=100A, VGS=0V Ratings min typ 12500 1200 950 80 630 860 750 220 30 55 1.0 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7507-002 10.2 5.1 3.6 4.5 1.3 2.7 18.0 (5.6) 1.2 6.3 14.0 15.1 0.8 0.4 123 2.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220 2.55 2.55 Switching Time Test Circuit VIN 10V 0V VIN PW=10µs D.C.≤1% ID=50A RL=0.6Ω VDD=30V Avalanche Resistance Test Circuit L ≥50Ω D VOUT 2SK4094 10V 0V 50Ω VDD G 2SK4094 P.G 50Ω S No. A0523-2/5 2SK4094 200 180 160 ID -- VDS 4V 180 160 Drain Current, ID -- A 140 120 100 80 60 40 20 0 0 0.2 Drain Current, ID -- A 10 140 120 100 80 25° C VGS=3V 60 40 20 0 Tc= -- 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1.0 1.5 2.0 2.5 3.0 25° C 75°C Tc=75° C --25° C 3.5 V 6V 4.0 25° C 4.5 IT11431 125 150 IT11559 1.2 1.4 IT11435 Tc=25°C Single pulse 200 ID -- VGS VDS=10V Single pulse Drain-to-Source Voltage, VDS -- V 20 8V IT11430 10 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 18 16 14 12 10 8 6 4 2 0 1 2 3 4 5 6 7 ID=50A Single pulse Single pulse 9 8 7 6 5 4 3 2 1 0 --50 --25 0 25 50 75 100 25°C V 50 =10 I D= GS A, V 50 I D= VG A, 4V S= Tc=75°C --25°C 8 9 10 Gate-to-Source Voltage, VGS -- V 3 yfs -- ID IT11558 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 Case Temperature, Tc -- °C IS -- VSD VGS=0V Single pulse Forward Transfer Admittance, yfs -- S 2 100 7 5 3 2 10 7 5 3 2 VDS=10V Single pulse Source Current, IS -- A 25 °C -25 =Tc °C 75° C °C 25°C 1.0 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 3 2 5 7 100 IT11434 3 0 0.2 Tc=7 5 0.4 0.6 --25°C 0.8 1.0 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V VDD=30V VGS=10V Ciss, Coss, Crss -- pF 2 Switching Time, SW Time -- ns 1000 7 5 3 2 10k 7 5 3 2 tf tr 100 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT10473 td(on) 1k 7 5 0 5 10 Coss Crss 15 20 25 30 IT10474 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A0523-3/5 2SK4094 10 9 VGS -- Qg VDS=30V ID=100A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 50 100 150 200 250 IT10475 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=400A ID=100A ≤10µs 10 1 10 DC 00m ms op s era tio n 1m s 10 0µ s µs Operation in this area is limited by RDS(on). 0.1 0.1 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 2.0 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 5 7 100 IT10960 PD -- Tc Allowable Power Dissipation, PD -- W 1.75 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 140 160 Ambient Temperature, Ta -- °C 120 IT11548 Case Temperature, Tc -- °C IT10483 EAS -- Ta Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT11439 Ambient Temperature, Ta -- °C No. A0523-4/5 2SK4094 Note on usage : Since the 2SK4094 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0523-5/5