BFL4007

Ordering number : ENA1689 BFL4007 SANYO Semiconductors DATA SHEET BFL4007 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications • • Reverse recovery time trr=95ns (typ) Input capacitance Ciss=1200pF (typ) ON-resistance RDS(on)=0.52Ω (typ) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Source-to-Drain Diode Forward Current (DC) Source-to-Drain Diode Forward Current (Pulse) Allowable Power Dissipation Symbol VDSS VGSS IDc*1 IDpack*2 IDP IS ISP PD Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition*)3 Conditions Ratings 600 ±30 14 8.7 49 14 49 2.0 40 Unit V V A A A A A W W Note : *1 Shows chip capability Continued on next page. *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. Package Dimensions unit : mm (typ) 7509-002 10.0 3.2 3.5 7.2 4.5 2.8 Product & Package Information • Package : TO-220FI(LS) • JEITA, JEDEC : SC-67, SOT-186A, TO-220F • Minimum Packing Quantity : 100/bag, 50/magazine Marking 16.1 16.0 0.6 FL4007 LOT No. 0.9 1.2 0.75 14.0 3.6 1.2 0.7 123 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 2.55 2.55 http://semicon.sanyo.com/en/network 60210QB TK IM TC-00002337 No. A1689-1/5 BFL4007 Continued from preceding page. Parameter Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *4 Avalanche Current *5 Symbol Tch Tstg EAS IAV Conditions Ratings 150 --55 to +150 215 8.5 Unit °C °C mJ A Note : *4 VDD=99V, L=5mH, IAV=8.5A (Fig.1) *5 L≤5mH, single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr Conditions ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=7A ID=7A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See Fig.2 See Fig.2 See Fig.2 See Fig.2 VDS=200V, VGS=10V, ID=14A VDS=200V, VGS=10V, ID=14A VDS=200V, VGS=10V, ID=14A IS=14A, VGS=0V See Fig.3 IS=14A, VGS=0V, di/dt=100A/μs Ratings min 600 100 ±100 3 4.3 8.5 0.52 1200 220 43 27 72 122 48 46 8.6 26.4 1.1 95 250 1.5 0.68 5 typ max Unit V μA nA V S Ω pF pF pF ns ns ns ns nC nC nC V ns nC Fig.1 Avalanche Resistance Test Circuit D ≥50Ω RG L Fig.2 Switching Time Test Circuit 10V 0V VIN VDD=200V ID=7A RL=28.6Ω D VOUT G S BFL4007 VDD PW=10μs D.C.≤0.5% VIN 10V 0V 50Ω G BFL4007 P.G RGS=50Ω S No. A1689-2/5 BFL4007 Fig.3 trr Reverse Recovery Resistance Test Circuit BFL4007 G S VDD=50V D 500μH Driver MOSFET 35 30 ID -- VDS Tc=25°C VGS=20V 10 V 15V 40 35 30 25 20 15 10 5 0 ID -- VGS VDS=20V Tc= --25°C 8V Drain Current, ID -- A Drain Current, ID -- A 25 20 15 10 25°C 75°C 6V 5 VGS=5V 0 0 5 10 15 20 25 30 IT15477 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V 2.0 1.8 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 --50 RDS(on) -- Tc IT15478 ID=7A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 3 5 7 9 11 13 15 IT15479 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Tc=75°C 25°C --25°C VG 1 S= =7 , ID 0V A --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 3 | yfs | -- ID Case Temperature, Tc -- °C 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IS -- VSD IT15480 Forward Transfer Admittance, | yfs | -- S 2 VDS=10V VGS=0V 7 5 3 2 1.0 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.01 0 0.2 0.4 Tc= 7 5°C 25°C --25 °C 0.6 0.8 = Tc --2 C 5° °C 75 Source Current, IS -- A 10 °C 25 1.0 1.2 1.4 1.6 Drain Current, ID -- A IT15481 Diode Forward Voltage, VSD -- V IT15482 No. A1689-3/5 BFL4007 1000 7 SW Time -- ID VDD=200V VGS=10V Ciss, Coss, Crss -- pF 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Switching Time, SW Time -- ns 5 3 2 Ciss td (off) 1000 7 5 3 2 100 7 5 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 10 0 5 10 15 20 25 30 35 40 45 50 100 7 5 3 2 10 0.1 Coss tf tr Crss td(on) Drain Current, ID -- A 10 9 IT15483 2 100 7 5 3 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO IT15484 Gate-to-Source Voltage, VGS -- V VDS=200V ID=14A Drain Current, ID -- A IDP=49A (PW≤10μs) IDc(*1)=14A IDpack(*2)=8.7A 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 IT15485 10 1m 10 s m DC 100 s op ms era tio n 10 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0μ s μs Operation in this area is limited by RDS(on). Tc=25°C Single pulse 23 5 7 1.0 0.01 0.1 *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 23 5 7 10 23 5 7 100 23 Total Gate Charge, Qg -- nC 2.5 PD -- Ta Drain-to-Source Voltage, VDS -- V 45 PD -- Tc 57 1000 IT15486 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 120 EAS -- Ta IT15487 Case Temperature, Tc -- °C IT15488 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT10478 Ambient Temperature, Ta -- °C No. A1689-4/5 BFL4007 Note on usage : Since the BFL4007 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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