CPH5617-TL-E

Ordering number : EN7370C CPH5617 N-Channel Power MOSFET http://onsemi.com 30V, 150mA, 3.7Ω, Dual CPH5 Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit VDSS VGSS Gate to Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation 30 PW≤10μs, duty cycle≤1% V ±10 V 150 mA 600 mA 0.25 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7017A-004 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 4 CPH5617-TL-E 0.15 2.9 5 3 Packing Type : TL Marking LOT No. FZ 0.05 1.6 2.8 0.2 0.6 Package Dimensions 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 Electrical Connection 5 4 3 CPH5 1 Semiconductor Components Industries, LLC, 2013 August, 2013 2 82113 TKIM TC-00002980/71112 TKIM/N1109PE TKIM/90503 TSIM TA-3722 No.7370-1/6 CPH5617 Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Conditions Ratings min typ max 30 ID=1mA, VGS=0V VDS=30V, VGS=0V Unit V 10 μA ±10 μA Gate to Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=100μA 0.4 Forward Transfer Admittance | yfs | VDS=10V, ID=80mA 0.15 RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Static Drain to Source On-State Resistance Input Capacitance Ciss 1.3 0.22 V S Ω 7.0 pF Output Capacitance Coss 5.9 pF Reverse Transfer Capacitance Crss 2.3 pF Turn-ON Delay Time 19 ns Rise Time td(on) tr 65 ns Turn-OFF Delay Time td(off) 155 ns Fall Time tf 120 ns Total Gate Charge Qg 1.58 nC 0.26 nC Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA 0.31 IS=150mA, VGS=0V 0.87 nC 1.2 V Switching Time Test Circuit VDD=15V 4V 0V VIN ID=80mA RL=187.5Ω VIN VOUT D PW=10μs D.C.≤1% G P.G 50Ω S CPH5617 Ordering Information Device CPH5617-TL-E Package Shipping memo CPH5 3,000pcs./reel Pb Free No.7370-2/6 CPH5617 0.08 VGS=1.5V 0.06 0.04 0.20 75 °C 6.0 V 0.10 Ta= --25 °C 0.25 Drain Current, ID -- A V 3.0 4.0V 0.12 V 2.0 2. 3.5V 5V VDS=10V 0.14 Drain Current, ID -- A ID -- VGS 0.30 25 °C ID -- VDS 0.16 0.15 0.10 0.05 0.02 0 0 0 0.4 0.2 0.6 0.8 0 1.0 Drain to Source Voltage, VDS -- V 1.0 1.5 2.0 2.5 3.0 Gate to Source Voltage, VGS -- V RDS(on) -- VGS 10 0.5 IT00029 RDS(on) -- ID 10 Ta=25°C IT00030 VGS=4V Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω 9 8 7 80mA 6 5 ID=40mA 4 3 2 1 1 2 3 4 5 7 6 8 9 Gate to Source Voltage, VGS -- V Ta=75°C 25°C --25°C 3 2 2 3 5 7 2 0.1 3 Drain Current, ID -- A 1 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT00035 7 2 0.1 3 5 IT00032 VGS=1.5V 5 3 2 10 Ta=75°C 7 --25°C 5 25°C 3 2 2 3 5 7 2 0.01 Drain Current, ID -- A 3 IT00034 yfs -- ID 1.0 2 0 --60 5 RDS(on) -- ID 1.0 0.001 Forward Transfer Admittance, yfs -- S 3 3 IT00033 mA =40 I D , 5V =2. mA =80 V GS , ID V 0 . =4 VGS 4 2 7 5 6 5 --25°C 2 100 RDS(on) -- Ta 7 25°C 3 Drain Current, ID -- A Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω 7 5 Ta=75°C IT00031 VGS=2.5V 1.0 0.01 Static Drain to Source On-State Resistance, RDS(on) -- Ω 10 RDS(on) -- ID 10 5 1.0 0.01 0 0 7 VDS=10V 7 5 3 5°C --2 Ta= 2 75°C 0.1 25°C 7 5 3 2 0.01 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 5 IT00036 No.7370-3/6 CPH5617 IS -- VSD 5 Switching Time, SW Time -- ns 7 5 --25 °C Ta= 75 °C 25° C Source Current, IS -- A 2 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V td(off) tf 2 100 7 tr 5 3 td(on) 2 2 10 Ciss 5 Coss 3 Crss 3 2 5 7 2 0.1 IT00038 VGS -- Qg 10 Gate to Source Voltage, VGS -- V 3 7 2 Drain Current, ID -- A VDS=10V ID=150mA 9 5 Ciss, Coss, Crss -- pF 3 IT00037 f=1MHz 7 5 10 0.01 1.2 Ciss, Coss, Crss -- VDS 100 VDD=15V VGS=4V 7 3 0.1 SW Time -- ID 1000 VGS=0V 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 Drain to Source Voltage, VDS -- V 20 IT00039 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00040 PD -- Ta 0.30 Allowable Power Dissipation, PD -- W 18 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Amibient Temperature, Ta -- °C 140 160 IT01962 No.7370-4/6 CPH5617 Outline Drawing CPH5617-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.7370-5/6 CPH5617 Note on usage : Since the CPH5617 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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