CPH6350-TL-E

Ordering number : ENA1529B CPH6350 P-Channel Power MOSFET http://onsemi.com –30V, –6A, 43mΩ, Single CPH6 Features • • • 4V drive Low ON-resistance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit VDSS VGSS Gate to Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) --30 V ±20 V --6 A --24 A 1.6 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Ordering & Package Information unit : mm (typ) 7018A-003 5 4 Package Shipping memo CPH6350-TL-E CPH6 SC-74, SOT-26, SOT-457 3,000pcs./ reel Pb-Free CPH6350-TL-W CPH6 SC-74, SOT-26, SOT-457 3,000pcs./ reel Pb-Free and Halogen Free 0.9 2 0.95 3 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Marking XC 1 Packing Type: TL LOT No. 0.05 1.6 0.2 0.6 2.8 0.2 0.6 6 CPH6350-TL-E CPH6350-TL-W 0.15 2.9 Device TL Electrical Connection 1, 2, 5, 6 CPH6 3 4 Semiconductor Components Industries, LLC, 2013 August, 2013 82813 TKIM/71112 TKIM TC-00002780/80509PE TKIM TC-00002052 No. A1529-1/6 CPH6350 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V Ratings min typ Unit max --30 V Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--3A 5.4 RDS(on)1 ID=--3A, VGS=--10V 33 43 mΩ RDS(on)2 ID=--1.5A, VGS=--4.5V 58 82 mΩ RDS(on)3 ID=--1.5A, VGS=--4V 61 86 mΩ Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss VDS=--10V, f=1MHz --1.2 --1 μA ±10 μA --2.6 V S 600 pF 145 pF Reverse Transfer Capacitance Crss 110 pF Turn-ON Delay Time td(on) tr 7.4 ns 27 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--6A IS=--6A, VGS=0V 62 ns 45 ns 13 nC 1.8 nC 3.2 nC --0.87 --1.2 V Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --3A RL=5Ω VOUT VIN D PW=10μs D.C.≤1% G P.G 50Ω S CPH6350 No. A1529-2/6 CPH6350 ID -- VDS --3 .0 V VDS= --10V --8 VGS= --2.5V --5 --4 --3 --2 --0.5 --1 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain to Source Voltage, VDS -- V Static Drain to Source On-State Resistance, RDS(on) -- mΩ --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 IT14856 RDS(on) -- Ta 100 80 60 40 20 0 --2 --4 --6 --8 --10 --12 --14 7 Source Current, IS -- A 3 °C -25 =a T °C 75 1.0 7 25 °C 5 3 2 0.1 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A --40 --20 0 20 2 3 5 7 40 60 80 100 120 5 IS -- VSD --1.0 7 5 3 2 --0.1 7 5 3 2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V f=1MHz 1000 Ciss, Coss, Crss -- pF 2 tr 10 td(on) 7 Ciss 5 3 2 Coss Crss 100 5 VDD= --15V VGS= --10V 3 5 7 --1.0 --1.2 IT14860 Ciss, Coss, Crss -- VDS 2 3 2 160 VGS=0V --10 7 5 3 2 --0.01 7 5 3 2 --0.001 --0.2 tf 7 140 IT14858 td(off) 7 3 --0.1 20 IT14859 SW Time -- ID 100 = VGS 30 2 10 2 40 .0A = --3 0V, I D --10. Ambient Temperature, Ta -- °C VDS= --10V 5 A 1.5 = -, ID V 5 . 4 = -V GS 50 IT14857 | yfs | -- ID = -, ID .0V 4 = -V GS 60 10 --60 --16 A 1.5 70 C 120 80 --25 ° --3.0A 25°C 140 90 5°C Static Drain to Source On-State Resistance, RDS(on) -- mΩ ID= --1.5A 160 2 Forward Transfer Admittance, | yfs | -- S --1.0 Gate to Source Voltage, VGS -- V Ta=25°C Gate to Source Voltage, VGS -- V Switching Time, SW Time -- ns --0.5 100 180 0 0 IT14855 RDS(on) -- VGS 200 0 --1.0 Ta= 7 0 25° C --1.0 --6 Ta= 75° C --25 °C --1.5 Drain Current, ID -- A --7 --6.0 V --2.0 ID -- VGS --9 --4 . --18.0V Drain Current, ID -- A --2.5 --4.0V 5V -3 .5 V --10.0V --3.0 2 3 Drain Current, ID -- A 5 7 --10 2 IT14861 7 5 0 --5 --10 --15 --20 --25 Drain to Source Voltage, VDS -- V --30 IT14862 No. A1529-3/6 CPH6350 VGS -- Qg --10 3 2 --8 Drain Current, ID -- A Gate to Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 3 2 3 2 2 3 4 5 7 6 8 9 10 Total Gate Charge, Qg -- nC 12 11 13 IT14863 PD -- Ta 2.0 ID= --6A DC m 0m op 10 0 1m μs s 10 10 s s er --1.0 7 5 --1 1 IDP= --24A (PW≤10μs) 3 2 --0.1 7 5 0 Allowable Power Dissipation, PD -- W --10 7 5 --2 0 ASO 5 VDS= --10V ID= --6A ati on Operation in this area is limited by RDS(on). (T a= 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain to Source Voltage, VDS -- V 2 3 5 7 IT14864 When mounted on ceramic substrate (900mm2×0.8mm) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14865 No. A1529-4/6 CPH6350 Outline Drawing CPH6350-TL-E, CPH6350-TL-W Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1529-5/6 CPH6350 Note on usage : Since the CPH6350 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1529-6/6