ECH8410-TL-H

Ordering number : ENA1331A ECH8410 N-Channel Power MOSFET http://onsemi.com 30V, 12A, 10mΩ, Single ECH8 Features • • • • Low ON-resistance. 4V drive. Halogen free compliance. Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg Unit 30 V ±20 V 12 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (900mm2×0.8mm) 1.6 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-002 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Top View ECH8410-TL-H 0.25 2.9 0.15 8 Packing Type : TL Marking 5 KQ 2.3 0.25 2.8 0 to 0.02 Lot No. TL 4 1 0.65 Electrical Connection 0.3 8 7 6 5 0.07 0.9 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Bottom View ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 1 2 3 4 51612 TKIM TC-00002188/N2509PE TK IM TC-00002188 No. A1331-1/7 ECH8410 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance typ Unit max ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A 7.5 RDS(on)1 ID=6A, VGS=10V 7.5 10 mΩ RDS(on)2 ID=3A, VGS=4.5V 13 18.2 mΩ RDS(on)3 ID=3A, VGS=4V 15.5 22 mΩ Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time Ratings min V(BR)DSS IDSS Input Capacitance Rise Time Conditions 30 V 1.2 1 μA ±10 μA 2.6 V S 1700 pF 300 pF Crss 200 pF td(on) tr 17 ns 50 ns 110 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=15V, VGS=10V, ID=12A IS=12A, VGS=0V 72 ns 31 nC 5.5 nC 5.5 nC 0.8 1.2 V Switching Time Test Circuit VDD=15V 10V 0V VIN PW=10μs D.C.≤1% ID=6A RL=2.5Ω VIN VOUT D G P.G 50Ω S ECH8410 Ordering Information Device ECH8410-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1331-2/7 ECH8410 ID -- VDS 11 10 6 4 8 7 6 5 4 3 2 C 2 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=3A 6A 25 20 15 10 5 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V | yfs | -- ID 7 2 = Ta °C 75 °C 1.0 25 7 5 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 5 0 50 100 tf 5 2 td(on) 10 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 2 200 IT14585 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT14587 Ciss, Coss, Crss -- VDS 2 tr 150 3 td(off) 3 100 f=1MHz 2 7 0.1 10.0 V GS= 5 3 7 4.0 IT14583 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 3 VDD=15V VGS=10V 5 3.5 6A V, I D= 10 IT14586 SW Time -- ID 7 15 0.01 7 5 3 2 0.001 0.2 3 0.1 0.01 3.0 Ambient Temperature, Ta -- °C 10 C 5° --2 2.5 3A ,I = 4.0V D = VGS =3A V, I D =4.5 S VG 20 3 2 5 2.0 25 IT14584 VDS=10V 3 1.5 RDS(on) -- Ta 0 --50 18 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 2 1.0 30 30 0 0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 35 0 0 IT15056 RDS(on) -- VGS 40 0 1.0 --25 °C 0.3 C 0.2 25° 0.1 Ta= 75° C 0 25° 1 0 --25° C VGS=3.0V 9 Ta=7 5°C 8 VDS=10V 12 Drain Current, ID -- A 10.0V Drain Current, ID -- A 10 ID -- VGS 13 6.0V 4.5V 4.0V 8.0V 12 3 IT14588 Ciss 1000 7 5 3 Coss 2 Crss 100 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14589 No. A1331-3/7 ECH8410 VGS -- Qg 10 100 7 5 3 2 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 5 10 15 20 25 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 30 35 IT14590 PD -- Ta 1.8 ASO 2 VDS=15V ID=12A 10 7 5 3 2 1.0 7 5 3 2 IDP=60A PW≤10μs 10 0μ s 1m s ID=12A 10 ms 10 0m op era s tio n( Ta =2 Operation in this 5° area is limited by RDS(on). C) DC 0.1 7 5 Ta=25°C 3 2 Single pulse When mounted on 0.01 0.01 2 3 5 7 0.1 ceramic substrate (900mm2×0.8mm) 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT15057 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14986 No. A1331-4/7 ECH8410 Embossed Taping Specification ECH8410-TL-H No. A1331-5/7 ECH8410 Outline Drawing ECH8410-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1331-6/7 ECH8410 Note on usage : Since the ECH8410 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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