EMH2412-TL-H

Ordering number : ENA1315A EMH2412 N-Channel Power MOSFET http://onsemi.com 24V, 6A, 27mΩ, Dual EMH8 Features • • • • • • Low ON-resistance Best suited for LiB charging and discharging switch Common-drain type 2.5V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 24 V ±12 V 6 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W Total Dissipation PD PT 1.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7045-006 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.125 0.2 0.2 EMH2412-TL-H 5 Taping Type : TL Marking LM 2.1 1.7 8 LOT No. TL 1 0.2 4 0.5 0.05 0.75 2.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Electrical Connection 8 7 6 5 1 2 3 4 EMH8 Semiconductor Components Industries, LLC, 2013 July, 2013 53012 TKIM/91008PE TI IM TC-00001579 No. A1315-1/7 EMH2412 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Conditions Ratings min typ Unit max 24 ID=1mA, VGS=0V VDS=20V, VGS=0V V --1 μA ±10 μA Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 Forward Transfer Admittance | yfs | VDS=10V, ID=3A 2.8 RDS(on)1 RDS(on)2 16 21 27 mΩ 17 22 29 mΩ RDS(on)3 ID=3A, VGS=4.5V ID=3A, VGS=4V ID=3A, VGS=3.1V 18 25 34 mΩ RDS(on)4 ID=1.5A, VGS=2.5V 21 30 42 mΩ Static Drain-to-Source On-State Resistance Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=10V, VGS=4.5V, ID=6A 1.3 4.8 310 ns 1020 ns 3000 ns 2250 ns 6.3 nC 0.83 nC 1.9 IS=6A, VGS=0V V S 0.8 nC 1.2 V Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=3A RL=3.33Ω VIN D PW=10μs D.C.≤1% G VOUT Rg EMH2412 P.G 50Ω S Rg=2kΩ Ordering Information Device EMH2412-TL-H Package Shipping memo EMH8 3,000pcs./reel Pb Free and Halogen Free No. A1315-2/7 EMH2412 ID -- VDS 6 VGS=1.5V 1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 3A 40 30 20 10 0 1 2 3 4 5 6 7 Gate-to-Source Voltage, VGS -- V 1.0 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S C 5° --2 °C 75 °C 25 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 7 Switching Time, SW Time -- ns 5 VDD=10V VGS=4.5V td(off) 3 tf 2 1000 tr 7 5 td(on) 3 2 0.1 30 20 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT13207 1.6 1.8 IT13202 --40 --20 0 20 40 60 80 100 120 140 160 IT13997 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V IT13999 VGS -- Qg 4.5 VDS=10V ID=6A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 1.4 10 0.01 0.2 5 7 10 IT13998 Drain Current, ID -- A 1.2 5A =1. , ID V 5 . =2 VGS 3.0A , I D= V 0 . =4 3.0A VGS , I D= V 5 . =4 VGS 40 3 2 2 0.1 0.01 1.0 50 10 7 5 3 0.8 Ambient Temperature, Ta -- °C 5 = Ta 0.6 RDS(on) -- Ta 0 --60 8 VDS=10V 2 0.4 IT13996 | yfs | -- ID 10 0.2 60 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=1.5A 0 Gate-to-Source Voltage, VGS -- V Ta=25°C 50 7 0 1.0 IT13201 RDS(on) -- VGS 60 0 2 Ta=7 5°C 25°C --25°C 0 3 --25°C 2 4 25°C 3 5 Ta=7 5°C 1.8V Drain Current, ID -- A 4 VDS=10V V 2.0 3.5V Drain Current, ID -- A 5 ID -- VGS 7 2.5V 4.5V 4.0V 6 0 1 2 3 4 5 Total Gate Charge, Qg -- nC 6 7 IT13209 No. A1315-3/7 EMH2412 ASO 2 10 7 5 3 2 IDP=60A 10 ID=6A DC 10 0 1m μs s ms 0m s 10 op era tio 1.0 7 5 3 2 0.1 7 5 3 2 PW≤10μs Allowable Power Dissipation, PD -- W Drain Current, ID -- A 100 7 5 3 2 Operation in this area is limited by RDS(on). n( Ta =2 5° C) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 PD -- Ta 1.6 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13983 When mounted on ceramic substrate (900mm2×0.8mm) 1.4 1.3 1.2 1.0 To t 0.8 1u al ni di ss t ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13984 No. A1315-4/7 EMH2412 Embossed Taping Specification EMH2412-TL-H No. A1315-5/7 EMH2412 Outline Drawing EMH2412-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 1.9 0.4 0.3 0.5 No. A1315-6/7 EMH2412 Note on usage : Since the EMH2412 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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