SCH1337-TL-H

Ordering number : ENA1867C SCH1337 P-Channel Power MOSFET http://onsemi.com –30V, –2A, 150mΩ, Single SCH6 Features • • • ON-resistance RDS(on)1=115mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings VDSS VGSS Gate to Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg Unit --30 V ±20 V --2 A PW≤10μs, duty cycle≤1% --8 A When mounted on ceramic substrate (900mm2×0.8mm) 0.8 W 150 °C --55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7028-002 • Package : SCH6 • JEITA, JEDEC : SOT-563 • Minimum Packing Quantity : 5,000 pcs./reel SCH1337-TL-H 1.6 6 5 4 0.2 Packing Type : TL 1.5 2 TL 3 0.5 0.25 0.56 1 YN LOT No. 0.05 Marking LOT No. 1.6 0.05 0.2 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SCH6 Electrical Connection 1, 2, 5, 6 3 4 Semiconductor Components Industries, LLC, 2013 August, 2013 82113 TKIM TC-00002990/62712 TKIM/D2210 TKIM/D0110PE TKIM TC-00002465 No. A1867-1/6 SCH1337 Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage Conditions Ratings min V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V --30 VDS=--10V, ID=--1mA VDS=--10V, ID=--1A --1.2 Forward Transfer Admittance VGS(off) | yfs | Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID=--1A, VGS=--10V ID=--0.5A, VGS=--4.5V ID=--0.5A, VGS=--4V Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance typ Unit max V --1 μA ±10 μA --2.6 1.9 V S 115 150 mΩ 182 255 mΩ 208 292 mΩ 172 pF 51 pF Crss 36 pF Turn-ON Delay Time td(on) 4.5 ns Rise Time 4.2 ns Turn-OFF Delay Time tr td(off) 20 ns Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--2A IS=--2A, VGS=0V 10.6 ns 3.9 nC 0.6 nC 0.8 nC --0.86 --1.5 V Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --1A RL=15Ω VIN D PW=10μs D.C.≤1% VOUT G SCH1337 P.G 50Ω S Ordering Information Device SCH1337-TL-H Package Shipping memo SCH6 5,000pcs./reel Pb-Free and Halogen Free No. A1867-2/6 SCH1337 ID -- VDS --8.0 V VDS= --10V --1.8 --1.6 --1.0 --0.8 Ta= 7 --0.4 --0.4 --0.2 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain to Source Voltage, VDS -- V 400 300 200 100 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate to Source Voltage, VGS -- V 5°C --2 C = Ta 75° 1.0 7 °C 5 25 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --4.5 IT16078 100 --20 0 20 40 60 80 100 120 140 160 IT16080 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 td(off) 2 tf 10 7 td(on) 5 tr 3 2 --0.4 --0.6 --0.8 --1.0 Ciss, Coss, Crss -- VDS --1.2 IT16082 f=1MHz 7 5 Ciss, Coss, Crss -- pF 5 --0.2 1000 VDD= --15V VGS= --10V 7 0 Diode Forward Voltage, VSD -- V SW Time -- ID 100 Switching Time, SW Time -- ns --4.0 A --0.5 , I D= V 0 . 4 = -VGS .5A = --0 .5V, I D 4 -= VGS = --1.0A 10.0V, I D V GS= -- 200 --0.01 5 7 --10 IT16081 Drain Current, ID -- A 1.0 --0.1 --3.5 3 2 2 0.1 --0.01 --3.0 300 --10 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 2 --2.5 Ambient Temperature, Ta -- °C 5 3 --2.0 400 0 --60 --40 --18 VDS= --10V 7 --1.5 RDS(on) -- Ta IT16079 | yfs | -- ID 10 --1.0 500 Static Drain to Source On-State Resistance, RDS(on) -- mΩ Static Drain to Source On-State Resistance, RDS(on) -- mΩ ID= --0.5A --1.0A 0 --0.5 Gate to Source Voltage, VGS -- V Ta=25°C 500 0 IT16039 RDS(on) -- VGS 600 0 --1.0 Ta=7 5°C 25°C --25 °C 0 --25°C --0.6 °C --0.8 --1.2 25 V --3.0 V GS= --1.4 5°C --1.2 Drain Current, ID -- A --10. 0 V --1.6 Drain Current, ID -- A ID -- VGS --2.0 --6. 0V --4 .5V --4 .0V --2.0 3 2 Ciss 100 7 Coss 5 Crss 3 2 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 10 --10 IT16083 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain to Source Voltage, VDS -- V --18 --20 IT16084 No. A1867-3/6 SCH1337 VGS -- Qg --10 --8 Drain Current, ID -- A Gate to Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.2 ASO --100 7 5 3 2 VDS= --15V ID= --2A 4.0 4.5 IT16047 --10 7 5 3 2 IDP= --8A (PW≤10μs) 0μ ms DC --1.0 7 5 3 2 --0.1 7 5 3 2 10 10 ID= --2A op s 10 0m ati s on (T a= 1m s er Operation in this area is limited by RDS(on). 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain to Source Voltage, VDS -- V 5 7--100 IT16143 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16049 No. A1867-4/6 SCH1337 Outline Drawing SCH1337-TL-H Land Pattern Example Mass (g) Unit 0.004 mm * For reference Unit: mm 1.4 0.4 0.3 0.5 0.5 No. A1867-5/6 SCH1337 Note on usage : Since the SCH1337 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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