TN5D01A-HCC11-E

TN5D01A Ordering number : ENA1446 SANYO Semiconductors DATA SHEET ExPD (Excellent-Performance Power & RF Device) TN5D01A Separately-Excited Step-Down Switching Regulator (Variable Output Type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET). Over current protection function (Self recovery type). Under voltage protection function. Over temperature protection function (Self recovery type). Soft start function (Variable subject to externally-connected capacitor). Stand-by mode function (Compatible with soft start terminal). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Maximum Input Voltage Symbol Maximum Output Current VIN max IO max Drain-to-Source Voltage of built-in MOSFET VDSS Drain Current of built-in MOSFET (DC) ID IDP Drain Current of built-in MOSFET (Pulse) FB Pin Maximum Input Voltage SS Pin Maximum Input Voltage Conditions PW≤10μs, duty cycle≤1% Vfb VSS Allowable Power Dissipation PD Operating Temperature Topr Junction Temperature Tj Storage Temperature Tstg Tc=25°C Ratings Unit 57 V 5 A --60 V --9 A --36 A 5 V 7 V 2.0 W 15 W --25 to +125 °C 150 °C --55 to +150 °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 71509IQ TK IM TC-00002025 No. A1446-1/11 TN5D01A Recommended Operating Conditions Parameter Input Voltage Output Voltage Output Current Operating Temperature Range Symbol Conditions VIN VOUT Ta=25°C IOUT Topr rec Ta=25°C Ratings Unit 10 to 30 Ta=25°C, VOUT / VIN ≥ 0.1 V 2.7 to 4.9 V 0 to 5 A --10 to + 85 °C Electrical Characteristics at Ta=25°C, See Specified Test Circuit (VOUT=3.3V) Parameter Symbol Conditions Ratings min typ Reference Voltage VFB η VIN=20V, IOUT=3A VIN=20V, IOUT=3A 1.12 Efficiency V(BR)DSS ID=--1mA, VIN, GND, Vfb, VSS=0V --60 RDS(on) ISW=5A Drain-to-Source Breakdown Voltage of built-in MOSFET Drain-to-Source On Resistance of built-in MOSFET Switching Frequency Freq Maximum Duty Duty max VIN=20V, IOUT=3A VIN=20V, Vfb=0V Line Regulation ΔVline VIN=10 to 30V, IOUT=3A Load Regulation ΔVload VIN=20V, IOUT=0.5 to 5A Output Voltage Temperature Coefficient *1 ΔVO/ΔTa VIN=20V, IOUT=3A, Ta=--25 to 125°C Iocp VIN=20V Over-Current-Protection-Operation -Threshold Current Under-Voltage-Protection-Operation -Threshold Voltage Under-Voltage-Protection-Operation -Release Voltage Under-Voltage-Protection Hysteresis Voltage Over-Temperature-Protection-Operation -Threshold-Temperature *1 Over-Temperature-Protection-Operation -Release Temperature *1 Over-Temperature-Protection-Operation -Hysteresis Temperature *1 max 1.15 1.18 82 Unit V % V 100 mΩ 120 150 180 88 92 96 % 30 60 mV 35 60 ±0.33 kHz mV mV / °C 5.1 7.5 10 A Vuvlo on 7.2 8.0 8.8 V Vuvlo off 8.1 9.0 9.9 V Vuvlo hys 1.0 V Ttsd on 165 °C Ttsd off 140 °C Ttsd hys 25 °C μA SS Terminal Current ISS VIN=20V 10 Standby Operating Voltage Vstb on VIN=20V 0.3 Standby Current Istb VIN=20V, VSS=0V V 500 μA Note: the values with “*1” are our targeted values, but not guaranteed. No. A1446-2/11 TN5D01A Package Dimensions unit : mm (typ) 7531-001 10.0 4.5 3.2 21.4 17.5 (1.6) 16.0 7.2 3.5 2.8 8.9 2.4 0.9 0.5 12 3 45 0.7 1.27 3.81 2.54 1.27 2.75 2.54 1 : VIN 2 : GND 3 : SWOUT 4 : FB 5 : SS SANYO : TO-220FI5H-HCC Block Diagram VIN 1 3 SWOUT Under Voltage Protect Over Temperature Protect Over Current Protect SENSE Pch MOSFET OUTPUT -COMP + OSC SS 5 SOFTSTART Band Gap + -- GND 2 AMP 4 FB No. A1446-3/11 TN5D01A Pin Functions Pin No. Symbol 1 Function Power Supply Input (Maximum 57V) 2 VIN GND 3 SWOUT Pulse Voltage Output 4 FB Feedback from Output Voltage 5 SS For Soft Start Capacitor Connection and Standby Mode Switching GND Application Circuit Example SWOUT 3 1 VIN VOUT VIN FB 4 5 SS + + 2 GND GND Forward Bias A S O IDP= --36A