TN5D51A-HB11-E

TN5D51A Ordering number : ENA1031 SANYO Semiconductors DATA SHEET TN5D51A ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET). Over current protection function (Self recovery type). Under voltage protection function. Over temperature protection function (Self recovery type). Soft start function (Variable subject to externally-connected capacitor). Stand-by mode function (Compatible with soft start terminal). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Maximum Input Voltage Maximum Output Current Drain-to-Source Voltage of built-in MOSFET Drain Current of built-in MOSFET (DC) Symbol Ratings Unit 57 5 A VDSS ID --60 V Drain Current of built-in MOSFET (Pulse) IDP FB Pin Maximum Input Voltage Vfb VSS SS Pin Maximum Input Voltage Conditions VIN max IO max Allowable Power Dissipation PD Operating Temperature Topr Junction Temperature Tj Storage Temperature Tstg PW≤10μs, duty cycle≤1% Tc=25°C V --9 A --36 A 15 V 7 V 2.0 W 15 W --25 to +125 °C 150 °C --55 to +150 °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22708IQ TI IM TC-00001255 No. A1031-1/11 TN5D51A Recommend Operating Conditions Parameter Symbol Input Voltage Output Current Operating Temperature Range Conditions Ratings Unit VIN Ta=25°C 20 to 48 V IOUT Ta=25°C 0 to 5 A --10 to +85 °C Topr rec Electrical Characteristics at Ta=25°C, See Specified Test Circuit Parameter Symbol Output Voltage Conditions VOUT η Efficiency Drain-to-Source Breakdown Voltage V(BR)DSS of built-in MOSFET Drain-to-Source On Resistance RDS(on) of built-in MOSFET Switching Frequency Freq Maximum Duty Duty max Line Regulation ΔVline Load Regulation ΔVload Output Voltage Temperature Coefficient *1 ΔVO / ΔTa Over-Current-Protection-Operation Iocp -Threshold Voltage Under-Voltage-Protection-Operation -Release Voltage Under-Voltage-Protection Hysteresis Voltage Over-Temperature-Protection-Operation -Threshold-Current *1 Over-Temperature-Protection-Operation -Release Temperature *1 Over-Temperature-Protection -Hysteresis Temperature *1 SS Terminal Current VIN=30V, IOUT=3A VIN=30V, IOUT=3A 11.7 ID=--1mA, VIN, GND, Vfb, VSS=0V --60 12.4 V % V 100 mΩ 120 150 180 88 92 96 % 130 200 mV 70 100 VIN=30V, IOUT=0.5 to 5A VIN=30V, IOUT=3A, Ta= --25 to +125°C VIN=30V 12.0 92 ISW=5A VIN=30V, IOUT=3A VIN=30V, Vfb=0V VIN=20 to 40V, IOUT=3A Unit max kHz mV mV / °C ±1.2 7.5 10 A Vuvlo on 7.2 8.0 8.8 V Vuvlo off 8.1 9.0 9.9 V Vuvlo hys 1.0 V Ttsd on 165 °C Ttsd off 140 °C Ttsd hys 25 °C 10 μA ISS Vstb on Standby Operating Voltage typ 5.1 -Threshold Current Under-Voltage-Protection-Operation Ratings min Standby Current Istb VIN=30V VIN=30V VIN=30V, VSS=0V 0.3 V 500 μA Note: the values with "*1" are our targeted values, but not guaranteed. Package Dimensions unit : mm (typ) 7527-001 10.0 4.5 3.2 1.6 16.0 7.2 3.5 2.8 1 2 3 4 (5.9) 0.9 0.5 12.5 14.0 2.4 5 1.27 0.7 3.81 2.54 1.27 2.54 2.75 1 : VIN 2 : GND 3 : SWOUT 4 : FB 5 : SS SANYO : TO-220FI5H-HB No. A1031-2/11 TN5D51A Block Diagram VIN 1 3 SWOUT Under Voltage Protect Over Temperature Protect Over Current Protect SENSE Pch MOSFET OUTPUT -COMP + OSC SS 5 SOFTSTART Band Gap + AMP -- 4 FB GND 2 Pin Functions Pin No. Symbol 1 VIN Power Supply Input (Maximum 57V) Function 2 GND GND 3 SWOUT 4 FB Feedback from Output Voltage 5 SS For Soft Start Capacitor Connection and Standby Mode Switching Pulse Voltage Output Application Circuit Example 1 VIN SWOUT 3 VOUT VIN 5 SS + FB 4 + 2 GND GND GND No. A1031-3/11 TN5D51A Forward Bias A S O IDP= --36A 3 Drain Current, ID -- A μs 10 0μ 2 ID= --9A --10 7 5 s 1m s 10 ms 10 DC 0m op s era tio 3 2 n Operation in this area is limited by RDS(on). --1.0 7 5 3 2 Tc=25°C Single pulse --0.1 --0.1 2 3 2.0 No 1.5 he at sin k 1.0 0.5 0 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT13248 Drain-to-Source Voltage, VDS -- V 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12620 PD -- Tc 20 Allowable Power Dissipation, PD -- W PD -- Ta 2.5