TN8D41A
Ordering number : ENA1060
SANYO Semiconductors
DATA SHEET
ExPD (Excellent-Performance Power & RF Device)
Separately-Excited Step-Down
Switching Regulator
(5V Output type)
TN8D41A
Features
•
•
•
•
•
•
High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).
Over current protection (Self recovery type).
Under voltage protection.
Over temperature protection function (Self recovery type).
Soft start function (Variable subject to externally-connected capacitor).
Stand-by mode function (Compatible with soft start terminal).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Maximum Input Voltage
Maximum Output Current
Drain-to-Source Voltage of built-in MOSFET
Drain Current of built-in MOSFET (DC)
Drain Current of built-in MOSFET (Pulse)
Symbol
Conditions
VIN max
IO max
FB Pin Maximum Input Voltage
SS Pin Maximum Input Voltage
VSS
Allowable Power Dissipation
PD
Operating Temperature
Topr
Junction Temperature
Tj
Storage Temperature
Tstg
Unit
57
VDSS
ID
IDP
Vfb
Ratings
PW≤10μs, duty cycle≤1%
Tc=25°C
V
8
A
--60
V
--12
A
--48
A
7
V
7
V
2.0
W
20
W
--25 to +125
°C
150
°C
--55 to +150
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
O2908IQ MS IM TC-00001657 No. A1060-1/11
TN8D41A
Recommend Operating Conditions
Parameter
Symbol
Conditions
Ratings
Unit
Input Voltage
VIN
Ta=25°C
10 to 40
V
Output Current
IOUT
Ta=25°C
0 to 8
A
Operating Temperature Range
Topr rec
--10 to +85
°C
Electrical Characteristics at Ta=25°C, See Specified Test Circuit
Parameter
Symbol
Conditions
Output Voltage
VOUT
Efficiency
η
VIN=20V, IOUT=3A
VIN=20V, IOUT=3A
V(BR)DSS
ID=--1mA, VIN,GND,Vfb,VSS=0V
RDS(on)
ISW=5A
Switching Frequency
Freq
Maximum Duty
Duty max
Line Regulation
ΔVline
VIN=20V, IOUT=3A
VIN=20V, Vfb=0V
VIN=20 to 40V, IOUT=3A
Load Regulation
ΔVload
Output Voltage Temperature Coefficient *1
ΔVO / ΔTa
VIN=30V, IOUT=0.8 to 8A
VIN=20V, IOUT=3A, Ta= --25 to +125°C
Iocp
VIN=20V
Drain-to-Source Breakdown Voltage
of built-in MOSFET
Drain-to-Source On Resistance
of built-in MOSFET
Over-Current-Protection-Operation
-Threshold Current
Under-Voltage-Protection-Operation
-Threshold Voltage
Under-Voltage-Protection-Operation
-Release Voltage
Under-Voltage-Protection Hysteresis Voltage
Over-Temperature-Protection-Operation
-Threshold-Current *1
Over-Temperature-Protection-Operation
-Release Temperature *1
Over-Temperature-Protection
-Hysteresis Temperature *1
Ratings
min
typ
4.88
Unit
max
5.0
5.16
88
V
%
--60
V
80
mΩ
120
150
180
88
92
96
kHz
%
30
60
mV
45
80
mV
mV / °C
±0.5
8.1
12
16
A
Vuvlo on
7.2
8.0
8.8
V
Vuvlo off
8.1
9.0
9.9
V
Vuvlo hys
1.0
V
Ttsd on
165
°C
Ttsd off
140
°C
Ttsd hys
25
°C
10
μA
SS Terminal Current
ISS
Standby Operating Voltage
Vstb on
Standby Current
Istb
VIN=20V
VIN=20V
VIN=20V, VSS=0V
0.3
V
500
μA
Note: the values with "*1" are our targeted values, but not guaranteed.
Package Dimensions
unit : mm (typ)
7527-001
10.0
4.5
3.2
1.6
16.0
7.2
3.5
2.8
1
2
3
4
(5.9)
0.9
0.5
12.5
14.0
2.4
5
1.27
0.7
3.81
2.54
1.27
2.54
2.75
1 : VIN
2 : GND
3 : SWOUT
4 : FB
5 : SS
SANYO : TO-220FI5H-HB
No. A1060-2/11
TN8D41A
Block Diagram
VIN 1
3 SWOUT
Under
Voltage
Protect
Over
Temperature
Protect
Over Current
Protect
SENSE
Pch MOSFET
OUTPUT
-COMP
+
OSC
SS 5
SOFTSTART
Band Gap
+
AMP
--
4 FB
GND 2
Pin Functions
Pin No.
Symbol
1
VIN
Power Supply Input (Maximum 57V)
Function
2
GND
GND
3
SWOUT
4
FB
Feedback from Output Voltage
5
SS
For Soft Start Capacitor Connection and Standby Mode Switching
Pulse Voltage Output
Application Circuit Example
1 VIN
SWOUT 3
VOUT
VIN
5 SS
+
FB 4
+
2 GND
GND
GND
No. A1060-3/11
TN8D41A
Forward Bias A S O
IDP= --48A
Drain Current, ID -- A
3
2
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