TN8D41A-HB11-E

TN8D41A Ordering number : ENA1060 SANYO Semiconductors DATA SHEET ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (5V Output type) TN8D41A Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET). Over current protection (Self recovery type). Under voltage protection. Over temperature protection function (Self recovery type). Soft start function (Variable subject to externally-connected capacitor). Stand-by mode function (Compatible with soft start terminal). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Maximum Input Voltage Maximum Output Current Drain-to-Source Voltage of built-in MOSFET Drain Current of built-in MOSFET (DC) Drain Current of built-in MOSFET (Pulse) Symbol Conditions VIN max IO max FB Pin Maximum Input Voltage SS Pin Maximum Input Voltage VSS Allowable Power Dissipation PD Operating Temperature Topr Junction Temperature Tj Storage Temperature Tstg Unit 57 VDSS ID IDP Vfb Ratings PW≤10μs, duty cycle≤1% Tc=25°C V 8 A --60 V --12 A --48 A 7 V 7 V 2.0 W 20 W --25 to +125 °C 150 °C --55 to +150 °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2908IQ MS IM TC-00001657 No. A1060-1/11 TN8D41A Recommend Operating Conditions Parameter Symbol Conditions Ratings Unit Input Voltage VIN Ta=25°C 10 to 40 V Output Current IOUT Ta=25°C 0 to 8 A Operating Temperature Range Topr rec --10 to +85 °C Electrical Characteristics at Ta=25°C, See Specified Test Circuit Parameter Symbol Conditions Output Voltage VOUT Efficiency η VIN=20V, IOUT=3A VIN=20V, IOUT=3A V(BR)DSS ID=--1mA, VIN,GND,Vfb,VSS=0V RDS(on) ISW=5A Switching Frequency Freq Maximum Duty Duty max Line Regulation ΔVline VIN=20V, IOUT=3A VIN=20V, Vfb=0V VIN=20 to 40V, IOUT=3A Load Regulation ΔVload Output Voltage Temperature Coefficient *1 ΔVO / ΔTa VIN=30V, IOUT=0.8 to 8A VIN=20V, IOUT=3A, Ta= --25 to +125°C Iocp VIN=20V Drain-to-Source Breakdown Voltage of built-in MOSFET Drain-to-Source On Resistance of built-in MOSFET Over-Current-Protection-Operation -Threshold Current Under-Voltage-Protection-Operation -Threshold Voltage Under-Voltage-Protection-Operation -Release Voltage Under-Voltage-Protection Hysteresis Voltage Over-Temperature-Protection-Operation -Threshold-Current *1 Over-Temperature-Protection-Operation -Release Temperature *1 Over-Temperature-Protection -Hysteresis Temperature *1 Ratings min typ 4.88 Unit max 5.0 5.16 88 V % --60 V 80 mΩ 120 150 180 88 92 96 kHz % 30 60 mV 45 80 mV mV / °C ±0.5 8.1 12 16 A Vuvlo on 7.2 8.0 8.8 V Vuvlo off 8.1 9.0 9.9 V Vuvlo hys 1.0 V Ttsd on 165 °C Ttsd off 140 °C Ttsd hys 25 °C 10 μA SS Terminal Current ISS Standby Operating Voltage Vstb on Standby Current Istb VIN=20V VIN=20V VIN=20V, VSS=0V 0.3 V 500 μA Note: the values with "*1" are our targeted values, but not guaranteed. Package Dimensions unit : mm (typ) 7527-001 10.0 4.5 3.2 1.6 16.0 7.2 3.5 2.8 1 2 3 4 (5.9) 0.9 0.5 12.5 14.0 2.4 5 1.27 0.7 3.81 2.54 1.27 2.54 2.75 1 : VIN 2 : GND 3 : SWOUT 4 : FB 5 : SS SANYO : TO-220FI5H-HB No. A1060-2/11 TN8D41A Block Diagram VIN 1 3 SWOUT Under Voltage Protect Over Temperature Protect Over Current Protect SENSE Pch MOSFET OUTPUT -COMP + OSC SS 5 SOFTSTART Band Gap + AMP -- 4 FB GND 2 Pin Functions Pin No. Symbol 1 VIN Power Supply Input (Maximum 57V) Function 2 GND GND 3 SWOUT 4 FB Feedback from Output Voltage 5 SS For Soft Start Capacitor Connection and Standby Mode Switching Pulse Voltage Output Application Circuit Example 1 VIN SWOUT 3 VOUT VIN 5 SS + FB 4 + 2 GND GND GND No. A1060-3/11 TN8D41A Forward Bias A S O IDP= --48A Drain Current, ID -- A 3 2