TND027SW-TL-E

TND027SW Ordering number : EN7437C SANYO Semiconductors DATA SHEET ExPD(Excellent Power Device) TND027SW Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving Applications Features • • • • • N-channel MOSFET built in Overheat protection (Self recovery type) Overcurrent protection (Self recovery type current limiting function) Overvoltage protection Incorporates two sets of circuit Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Output Current VDS IO(DC) Input Voltage VIN Allowable Power Dissipation PD Operating Supply Voltage Operating Temperature VDS(opr) Topr Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Unit 60 V 1.5 A --0.3 to +10 V When mounted on ceramic substrate (1200mm2×0.8mm) Iunit 1.3 W When mounted on ceramic substrate (1200mm2×0.8mm) 1.7 W 40 V --40 to +85 °C 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7005A-005 • Package : SOP8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 1,000 pcs./reel 8 0.2 0.3 0.8 5.0 5 Packing Type: TL Marking 1.5 1.8 MAX TND 027 4.4 0.7 0.8 6.0 0.1 1 4 1.27 0.43 1 : GND1 2 : IN1 3 : GND2 4 : IN2 5 : OUT2 6 : OUT2 7 : OUT1 8 : OUT1 SANYO : SOP8 TL LOT No. Block Diagram OUT(D) Overcurrent protective circuit Output current control IN ESD protective circuit Overvoltage protective circuit Gate shutdown circuit Overheat protective circuit GND(S) http://semicon.sanyo.com/en/network O2611 TKIM/D2607IP TIIM TC-00001114/O2203 TSIM/51503 TSIM TA-100479 No.7437-1/5 TND027SW Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Clamp Voltage VDS, clamp IDSS1 Ratings Conditions min typ VIN=0V, IO=1mA VIN=0V, VDS=50V VIN=0V, VDS=12V 60 VIN(th) VIN(opr) VDS=5V, IO=1mA 1.0 Input Current (Output On) RDS(on) IIN VIN=5V, IO=1A VIN=5V Over-Heat Detecting Temperature Tj(sd) Over-Current Detecting Current Is VIN=5V, IO=1A VIN=5V Over-Current Limit (Peak) ILMT VIN, clamp VIN=5V IIN=1mA Output-OFF Current IDSS2 Input Threshold Voltage Protection Circuit Operating Input Voltage Drain-to-Source ON Resistance Input Clamp Voltage Unit max V 1.5 10 μA 5 μA 2.0 4 V 10 V 0.3 0.4 Ω 0.6 mA 120 150 190 °C 3.0 6.0 9.0 A 3.0 6.0 9.0 A 10 V Notes : 1. Overcurrent protection circuit limits the output current to the range of overcurrent limit value. 2. During overheat protecting operation, output current is turned off. RDS(on) -- Ta 0.5 4V 0.3 6V 0.2 0.1 0 --50 IO=1A 0.8 5V Drain-to-Source ON Resistance, RDS(on) -- Ω Drain-to-Source ON Resistance, RDS(on) -- Ω 0.4 RDS(on) -- VIN 1.0 IO=1A 0.6 0.4 Ta=85°C 0.2 25°C --40°C 0 --25 0 25 50 75 Ambient Temperature, Ta -- °C 0 100 4 6 8 10 Input Voltage, VIN -- V IIN -- Ta 0.12 2 IT05233 IIN -- VIN 1.4 Ta=25°C VIN=5V 1.2 Input Current, IIN -- mA 0.10 Input Current, IIN -- mA 12 IT05234 0.08 0.06 0.04 0.02 1.0 l) ma or abn 0.8 ( I IN 0.6 0.4 0.2 IIN(normal) 0 --50 0 --25 0 25 50 Ambient Temperature, Ta -- °C 75 100 IT05235 0 2 4 6 Input Voltage, VIN -- V 8 10 IT05236 No.7437-2/5 TND027SW IS -- Ta 9 IS -- VIN 9 Overcurrent Detecting Current, IS -- A Overcurrent Detecting Current, IS -- A Ta=25°C 8 7 6V 5V 6 4V 5 4 3 --50 8 7 6 5 4 3 --25 0 25 50 75 Ambient Temperature, Ta -- °C 4 100 6 7 8 9 10 Input Voltage, VIN -- V ILMT -- Ta 9 5 IT05237 IT05238 ILMT -- VIN 12 8 Overcurrent Limit, ILMT -- A 6V 5V 7 4V 6 5 4 0 25 50 75 4 2 100 4 VIN=0V IO=1mA 68 66 64 62 60 58 --25 0 25 50 75 7 8 9 10 IIN=1mA 12 11 10 9 8 --50 100 IT05240 VIN, clamp -- Ta 13 --25 0 25 50 75 Ambient Temperature, Ta -- °C IT05241 VIN(th) -- Ta 2.0 6 Input Voltage, VIN -- V VDS, clamp -- Ta 70 5 VDS=5V IO=1mA 100 IT05242 IO -- VIN 2.0 VDS=24V 1.8 1.8 1.4 1.2 1.4 25°C 1.6 1.2 1.0 0.8 --40° C Output Current, IO -- A 1.6 5°C Drain-to-Source Clamp Voltage, VDS, Clamp -- V 6 IT05239 Ambient Temperature, Ta -- °C Threshold Voltage, VIN(th) -- V 8 0 --25 Ambient Temperature, Ta -- °C 56 --50 10 Ta= 8 3 --50 Input Clamp Voltage, VIN, Clamp -- V Overcurrent Limit, ILMT -- A Ta=25°C 0.6 0.4 1.0 0.2 0.8 --50 0 --25 0 25 50 Ambient Temperature, Ta -- °C 75 100 IT05243 1 2 Input Voltage, VIN -- V 3 IT05244 No.7437-3/5 Tj(sd) -- VIN 160 158 156 154 152 150 148 146 144 142 140 4.0 4.5 5.0 5.5 6.0 Allowable Power Dissipation, PD(Circuit2) -- W Input Voltage, VIN -- V IT05245 PD(Circuit2) -- PD(Circuit1) 1.4 When mounted on ceramic substrate (1200mm2×0.8mm) 1.3 Allowable Power Dissipation, PD -- W Overheat Detecting Temperature, Tj(sd) -- °C TND027SW 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.3 Allowable Power Dissipation, PD(Circuit1) -- W 1.8 1.7 1.6 1.4 1.3 1.2 Total Dissipation 1unit 1.0 0.8 0.6 0.4 0.2 0 --40 1.5 PD -- Ta --20 0 20 40 60 80 Ambient Temperature, Ta -- °C IT05247 100 IT05248 Sample Application Circuit AC24V AC100V Lamp Lamp OUT IN TND027SW 5V 5V Microcontroller Microcontroller OUT 1 IN 1 GND Lamp TND027SW OUT 2 IN 2 5V Microcontroller GND 1, 2 Another Sample Application Circuit (Solenoid drive) AC24V AC100V Solenoid Solenoid TND027SW GND OUT 2 OUT 1 OUT IN 5V 5V MicroMicrocontroller controller IN 1 TND027SW IN 2 5V Microcontroller GND 1, 2 No.7437-4/5 TND027SW Operation Description • The output power MOSFET will be turned on when the input voltage exceeds the input threshold voltage (4 to 6V is recommended), and then the lamp will be turned on by the current flowing to the lamp. Conversely, the output power MOSFET will be turned off when the input voltage goes below the input threshold voltage, and the lamp will be turned off. • The inrush current that occurs during normal lamp operation is limited to a preset value by the built-in overcurrent protecting circuit, which makes the lamp life longer. • The internal overcurrent protection function limits the current of output power MOSFET when output current of at least the overcurrent detecting current value flows at load short. Besides, if the device temperature exceeds the allowable power dissipation, overheat protection function protects the power switch from being broken down by turning off the current of output power MOSFET when Tj comes to 150°C (typical). • As an example of application circuit, DC voltage can also be controlled as a solenoid drive. Addition • The diode between OUT and GND in the block diagram is parasitic diode of the MOSFET. • Not apply a voltage on IN terminal during the period when OUT voltage is lower then GND voltage when driving a solenoid or a motor. • Be sure connect a diode between OUT terminal and GND terminal when you want to apply a voltage on IN terminal under the above-stated state (that is, OUT Voltage < GND Voltage). Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2011. Specifications and information herein are subject to change without notice. PS No.7437-5/5