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2N3055

2N3055

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2N3055 - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N3055 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3055 DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 60 7 15 7 115 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.52 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Second breakdown collector current With base forward biased Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=0.2A ;RBE=100A IC=4A ;IB=0.4A IC=10A ;IB=3.3A IC=4A ; VCE=4V VCE=30V; IB=0 VCE=100V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=4A ; VCE=4V IC=10A ; VCE=4V VCE=40Vdc,t=1.0s, Nonrepetitive IC=0.5A ; VCE=10V 20 5.0 2.87 2.5 MIN 60 70 TYP. 2N3055 SYMBOL VCEO(SUS) VCER VCEsat-1 VCEsat-2 VBE ICEO ICEX IEBO hFE-1 hFE-2 Is/b fT MAX UNIT V V 1.1 3.0 1.5 0.7 1.0 5.0 5.0 70 V V V mA mA mA A MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3055 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3055 4
2N3055
1. 物料型号: - 型号为2N3055。

2. 器件简介: - 2N3055是一种硅NPN功率晶体管,采用TO-3封装,是MJ2955型号的补充。直流电流增益(hFE)在4A直流时为20-70,集电极-发射极饱和电压(VCE(sat))在4A直流时最大为1.1V。

3. 引脚分配: - 引脚1:基极(Base) - 引脚2:发射极(Emitter) - 引脚3:集电极(Collector)

4. 参数特性: - 绝对最大额定值包括:集电极-基极电压(VCBO)100V,集电极-发射极电压(VCEO)60V,发射极-基极电压(VEBO)7V,集电极电流(Ic)15A,基极电流(IB)7A,集电极功耗(Pc)115W,结温(TJ)150°C,存储温度(Tstg)-65至200°C。 - 热特性包括:结到壳热阻(Rthj-c)1.52℃/W。

5. 功能详解: - 2N3055设计用于通用开关和放大应用。特性表中详细列出了在不同条件下的参数,如集电极-发射极维持电压(VCEO(SUS))、集电极-发射极饱和电压(VCE(sat))、基极-发射极电压(VBE)、集电极截止电流(ICEO)、基极-发射极截止电流(IEBO)以及直流电流增益(hFE)等。

6. 应用信息: - 该晶体管适用于通用开关和放大应用。

7. 封装信息: - PDF中提供了TO-3封装的简化外形图和符号,以及外形尺寸图。
2N3055 价格&库存

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