2N3233

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3233 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio amplifier and power switching PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 110 100 7 7.5 115 150 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA ;IB=0 IC=5A; IB=0.5A IC=3A ; VCE=4V VCE=50V; IB=0 VCB=110V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=10V 18 MIN 100 TYP. 2N3233 SYMBOL V(BR)CEO VCE(sat) VBE(on) ICEO ICBO IEBO hFE MAX UNIT V 1.0 1.5 0.7 0.1 0.1 55 V V mA mA mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3233 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3