2N3235

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3235 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·Designed for general–purpose switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 65 55 7 15 7 115 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.52 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ;IB=0 IC=4A ;IB=0.4A IC=10A ;IB=3.3A IC=5A ; VCE=5V VCE=30V; IB=0 VCB=65V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V IC=10A ; VCE=5V 20 5 MIN 55 TYP. 2N3235 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 MAX UNIT V 1.1 3.0 1.5 0.7 0.1 0.1 70 V V V mA mA mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3235 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3