2N3237

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3237 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For power amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 90 90 5 20 7.5 200 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=0.2A ;IB=0 IC=10A; IB=1.0A IC=20A ;IB=4.0A IC=10A ; VCE=4V VCE=45V; IB=0 VCB=90V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=10A ; VCE=4V IC=20A ; VCE=4V 40 15 5 MIN 90 TYP. 2N3237 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 hFE-3 MAX UNIT V 1.4 4.0 2.2 1.0 0.1 0.1 V V V mA mA mA 60 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3237 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3