2N3716

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3716 DESCRIPTION ·With TO-3 package APPLICATIONS ·They are intended for use in power linear and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 80 7 10 4 150 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdwon voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=5A ;IB=0.5A IC=5A ;IB=0.5A IC=3A ; VCE=2V VCE=100V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V IC=10A ; VCE=4V IC=0.5A;VCE=10V 50 30 5 4 MIN 80 TYP. 2N3716 SYMBOL V(BR)CEO VCE(sat) VBE(sat) VBE(on) ICEX IEBO hFE-1 hFE-2 hFE-3 fT MAX UNIT V 0.8 1.5 1.5 1.0 10.0 5.0 150 V V V mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3716 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3