2N3771

2N3771

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2N3771 - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N3771 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3771 2N3772 DESCRIPTION ·With TO-3 package ·High power and high current capability APPLICATIONS ·For linear amplifiers, series pass regulators and inductive switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER Collector-base voltage 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 CONDITIONS Open emitter VALUE 50 100 40 60 5 7 30 20 30 2N3771 2N3772 7.5 5.0 15 TC=25 150 200 -65~200 UNIT V VCEO Collector-emitter voltage Open base V VEBO Emitter-base voltage Open collector V IC ICM IB IBM PD Tj Tstg Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Junction temperature Storage temperature A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage 2N3771 IC=0.2A ;IB=0 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 VBE Base-emitter on voltage 2N3772 2N3771 ICEO Collector cut-off current 2N3772 2N3771 ICEV Collector cut-off current 2N3772 2N3771 ICBO Emitter cut-off current 2N3772 2N3771 IEBO Emitter cut-off current 2N3772 2N3771 hFE-1 DC current gain 2N3772 2N3771 hFE-2 DC current gain 2N3772 fT Transition frequency Second breakdown energy with base forward biased 2N3771 2N3772 IC=20A ; VCE=4V IC=1.0A ; VCE=4V;f=50kHz VCE=40Vdc,t=1.0s, Nonrepetitive VCE=60Vdc,t=1.0s, Nonrepetitive IC=10A ; VCE=4V IC=30A ; VCE=4V VEB=7V; IC=0 IC=15A ; VCE=4V VCB=100V; IE=0 VEB=5V; IC=0 VCE=50V; IB=0 VCE=50V; VBE(off)=1.5V VCE=30V TC=150 VCE=100V; VBE(off)=1.5V VCE=45V TC=150 VCB=50V; IE=0 IC=10A ; VCE=4V VCE=30V; IB=0 IC=15A ;IB=1.5A IC=10A ;IB=1.0A IC=30A; IB=6A CONDITIONS SYMBOL 2N3771 2N3772 MIN 40 TYP. MAX UNIT VCEO(SUS) V 60 2.0 V 1.4 VCEsat-1 Collector-emitter saturation voltge VCEsat-2 Collector-emitter saturation voltage 4.0 IC=20A; IB=4A IC=15A ; VCE=4V 2.7 V V 2.2 10 2.0 10.0 5.0 10.0 2.0 mA mA mA 5.0 5.0 mA 15 60 5 0.2 3.75 MHz Is/b A 2.5 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3771 2N3772 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3771 2N3772 4
2N3771
1. 物料型号: - 型号为2N3771和2N3772。

2. 器件简介: - 2N3771和2N3772是高功率和高电流能力的晶体管,采用TO-3封装,适用于线性放大器、系列通路调节器和感性开关应用。

3. 引脚分配: - PIN 1: Base(基极) - PIN 2: Emitter(发射极) - PIN 3: Collector(集电极)

4. 参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):2N3771为50V,2N3772为100V - VCEO(集电极-发射极电压):2N3771为40V,2N3772为60V - VEBO(发射极-基极电压):2N3771为5V,2N3772为7V - Ic(集电极电流):2N3771为30A,2N3772为20A - ICM(集电极峰值电流):均为30A - IB(基极电流):2N3771为7.5A,2N3772为5A - IBM(基极峰值电流):均为15A - PD(总功率耗散):在Tc=25°C时为150W - Tj(结温):200°C - Tstg(储存温度):-65°C至200°C

5. 功能详解: - 包括了集电极-发射极维持电压、集电极-发射极饱和电压、基极-发射极导通电压、集电极截止电流、发射极截止电流等参数的最小值、典型值和最大值。

6. 应用信息: - 适用于线性放大器、系列通路调节器和感性开关应用。

7. 封装信息: - 提供了TO-3封装的简化外形图和符号,以及外形尺寸图(未标明的公差:±0.10mm)。
2N3771 价格&库存

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