2N3773

2N3773

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2N3773 - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N3773 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION 2N3773 ·With TO-3 package ·Complement to type 2N6609 ·High DC current gain ·Low saturation voltage ·High safe operating area APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Derate above 25 Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 160 140 7 16 30 4 15 150 0.855 150 -65~200 UNIT V V V A A A A W W/ SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Second breakdown collector current With base forward biased CONDITIONS IC=0.2A ;IB=0 IC=8A; IB=0.8A IC=16A ;IB=3.2A IC=8A ; VCE=4V VCE=140V; IB=0 VCE=140V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=8A ; VCE=4V IC=16A ; VCE=4V VCE=100Vdc,t=1.0s, Nonrepetitive 15 5 1.5 MIN 140 TYP. SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 Is/b 2N3773 MAX UNIT V 1.4 4.0 2.2 2.0 2.0 10.0 5.0 60 V V V mA mA mA A THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3773 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N3773
1. 物料型号:2N3773,这是一种Silicon NPN Power Transistors(硅NPN功率晶体管)。

2. 器件简介: - 采用TO-3封装。 - 与2N6609型号相补。 - 具有高直流电流增益。 - 低饱和电压。 - 高安全工作区。

3. 引脚分配: - 1号引脚:基极(Base) - 2号引脚:发射极(Emitter) - 3号引脚:集电极(Collector)

4. 参数特性: - 集电极-基极电压(VCBO):160V,开发射极。 - 集电极-发射极电压(VCEO):140V,开基极。 - 发射极-基极电压(VEBO):7V,开集电极。 - 集电极电流(Ic):16A。 - 集电极峰值电流(ICM):30A。 - 基极电流(IB):4A。 - 基极峰值电流(IBM):15A。 - 总功率耗散(PD):150W,环境温度25°C时0.855W/°C。 - 结温(Tj):150°C。 - 存储温度(Tstg):-65°C至200°C。

5. 功能详解: - 该器件设计用于高功率音频、磁盘头定位器等线性应用。 - 也可用于功率开关电路,如继电器或电磁铁驱动器、直流到直流转换器或逆变器。

6. 应用信息:如上所述,适用于高功率音频和线性应用,以及功率开关电路。

7. 封装信息:TO-3封装,具体尺寸见图2。
2N3773 价格&库存

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