2N4399

2N4399

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2N4399 - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N4399 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION 2N4398 2N4399 2N5745 ·With TO-3 package ·Complement to type 2N5301/5302/5303 ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER 2N4398 VCBO Collector-base voltage 2N4399 2N5745 2N4398 VCEO Collector-emitter voltage 2N4399 2N5745 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 2N4398/4399 2N5745 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -30 -20 -7.5 200 200 -65~200 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N4398 VCEO(SUS) Collector-emitter sustaining voltage 2N4399 2N5745 VCE(sat)-1 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage 2N4398/4399 2N5745 2N4398/4399 2N5745 2N4398/4399 2N5745 IC=-10A; IB=-1A IC=-0.2A ;IB=0 2N4398 2N4399 2N5745 SYMBOL CONDITIONS MIN -40 -60 -80 TYP. MAX UNIT V -0.75 -1.0 -1.0 -1.5 -2.0 -4.0 -1.6 -1.7 -1.85 -2.0 -2.5 -1.7 -1.5 -3.0 -2.5 -5.0 -10 -5.0 -5.0 40 15 60 V VCE(sat)-1 IC=-15A ;IB=-1.5A IC=-20A ;IB=-2A IC=-20A ;IB=-4A IC=-30A ;IB=-6A IC=-10A; IB=-1A V VCE(sat)-3 VCE(sat)-4 VBE(sat)-1 V V V Collector-emitter saturation voltage Only for 2N4398 2N4399 Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N4398/4399 2N5745 2N4398/4399 2N5745 2N4398/4399 2N5745 2N4398/4399 2N5745 2N4398/4399 2N5745 VBE(sat)-2 IC=-15A ;IB=-1.5A IC=-20A ;IB=-2A IC=-20A ;IB=-4A IC=-15A ; VCE=-2V IC=-10A ; VCE=-2V IC=-30A ; VCE=-4V IC=-20A ; VCE=-4V VCE= Rated VCEO; VBE(off)=-1.5V TC=150 VCE=Rated VCEO; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V V VBE(sat)-3 V VBE(on)-1 V VBE(on)-2 ICEX ICEO IEBO hFE-1 hFE-2 V mA mA mA Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain 2N5745 2N4398/4399 2N5745 2N4398/4399 2N4398/4399 2N5745 IC=-10A ; VCE=-2V IC=-15A ; VCE=-2V IC=-20A ; VCE=-2V IC=-30A ; VCE=-4V IC=-1A ; VCE=-10V;f=1.0MHz hFE-3 DC current gain 5 4 2 fT Transition frequency MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N4398 2N4399 2N5745 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3
2N4399
1. 物料型号: - 2N4398 - 2N4399 - 2N5745

2. 器件简介: - 这些是硅PNP功率晶体管,采用TO-3封装。 - 是2N5301/5302/5303的补充型号。 - 具有低集电极饱和电压和优秀的安全工作区域。

3. 引脚分配: - 1号引脚:基极(Base) - 2号引脚:发射极(Emitter) - 3号引脚:集电极(Collector)

4. 参数特性: - 集电极-基极电压(VCBO):2N4398为-40V,2N4399为-60V,2N5745为-80V。 - 集电极-发射极电压(VCEO):2N4398为-40V,2N4399为-60V,2N5745为-80V。 - 发射极-基极电压(VEBO):-5V。 - 集电极电流(Ic):2N4398/4399为-30A,2N5745为-20A。 - 基极电流(IB):-7.5A。 - 总功耗(PD):200W。 - 结温(Tj):200℃。 - 存储温度(Tstg):-65℃至200℃。

5. 功能详解: - 包括热阻(R(th)jc):0.875℃/W。

6. 应用信息: - 用于功率放大器和开关电路应用。

7. 封装信息: - 提供了TO-3封装的简化外形图和符号,以及外形尺寸图(未标注的公差:±0.1mm)。
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