2N4905

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N4904 2N4905 2N4906 DESCRIPTION ·With TO-3 package ·Complement to type 2N4913/4914/4915 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER 2N4904 VCBO Collector-base voltage 2N4905 2N4906 2N4904 VCEO Collector-emitter voltage 2N4905 2N4906 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -5 -1 87.5 200 -65~200 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N4904 VCEO(SUS) Collector-emitter sustaining voltage 2N4905 2N4906 VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICBO ICEV IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-2.5A; IB=-0.25A IC=-5A ;IB=-1A IC=-2.5A ; VCE=-2V IC=-0.2A ;IB=0 2N4904 2N4905 2N4906 SYMBOL CONDITIONS MIN -40 -60 -80 TYP. MAX UNIT V -1.0 -1.5 -1.4 -1.0 -0.1 -0.1 -2.0 -1.0 25 7 4 100 V V V mA mA mA mA VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=-1.5V TC=150 VEB=-5V; IC=0 IC=-2.5A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-10V;f=1.0MHz MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N4904 2N4905 2N4906 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3