2N4915

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N4913 2N4914 2N4915 DESCRIPTION ·With TO-3 package ·Complement to type 2N4904/4905/4906 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N4913 VCBO Collector-base voltage 2N4914 2N4915 2N4913 VCEO Collector-emitter voltage 2N4914 2N4915 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 5 1 87.5 150 -65~200 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N4913 VCEO(SUS) Collector-emitter sustaining voltage 2N4914 2N4915 VCEsat-1 VCEsat-2 VBE ICEO ICBO ICEV IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=2.5A; IB=0.25A IC=5A ;IB=1A IC=2.5A ; VCE=2V IC=0.2A ;IB=0 2N4913 2N4914 2N4915 SYMBOL CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 1.0 1.5 1.4 1.0 1.0 1.0 2.0 1.0 25 7 4 100 V V V mA mA mA mA VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150 VEB=5V; IC=0 IC=2.5A ; VCE=2V IC=5A ; VCE=2V IC=1A ; VCE=10V;f=1.0MHz MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N4913 2N4914 2N4915 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3