2N5192

2N5192

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2N5192 - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N5192 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION ·With TO-126 package ·Complement to type 2N5193/5194/5195 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N5190 VCBO Collector-base voltage 2N5191 2N5192 2N5190 VCEO Collector-emitter voltage 2N5191 2N5192 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 4 7 1 40 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5190 VCEO(SUS) Collector-emitter sustaining voltage 2N5191 2N5192 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5190 ICEO Collector cut-off current 2N5191 2N5192 2N5190 ICBO Collector cut-off current 2N5191 2N5192 2N5190 ICEX Collector cut-off current 2N5191 2N5192 IEBO Emitter cut-off current 2N5190 IC=1.5A ;IB=0.15A IC=4A ;IB=1A IC=1.5A ; VCE=2V VCE=40V; IB=0 VCE=60V; IB=0 VCE=80V; IB=0 VCB=40V; IE=0 VCB=60V; IE=0 VCB=80V; IE=0 IC=0.1A; IB=0 SYMBOL 2N5190 2N5191 2N5192 CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 0.6 1.4 1.2 V V V 1.0 mA 0.1 mA VCE=40V; VBE(off)=1.5V TC=125 VCE=60V; VBE(off)=1.5V TC=125 VCE=80V; VBE(off)=1.5V TC=125 VEB=5V; IC=0 0.1 2.0 0.1 2.0 0.1 2.0 1.0 mA mA 25 hFE-1 DC current gain 2N5191 2N5192 2N5190 10 hFE-2 DC current gain 2N5191 2N5192 fT Transition frequency IC=1A ; VCE=10V;f=1MHz IC=4A ; VCE=2V 7 2 IC=1.5A ; VCE=2V 20 100 80 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5190 2N5191 2N5192 Fig.2 Outline dimensions 3
2N5192
1. 物料型号: - 型号包括2N5190、2N5191和2N5192,这些是硅NPN功率晶体管。

2. 器件简介: - 这些晶体管采用TO-126封装,是2N5193/5194/5195型号的补充,具有出色的安全工作区。

3. 引脚分配: - PIN 1: 发射极(Emitter) - PIN 2: 集电极,连接到安装底座(Collector;connected to mounting base) - PIN 3: 基极(Base)

4. 参数特性: - 绝对最大额定值包括集电极-基极电压(VCBO)、集电极-发射极电压(VCEO)、发射极-基极电压(VEBO)、集电极电流(Ic)、集电极峰值电流(ICM)、基极电流(IB)和总功率耗散(Po)等。 - 热特性包括结到壳的热阻(Rthjc)。

5. 功能详解: - 包括集电极-发射极维持电压(VCEO(SUS))、集电极-发射极饱和电压(VcEsat-1和VcEsat-2)、基极-发射极导通电压(VBE)、集电极截止电流(ICEO、ICBO、IcEx)、发射极截止电流(IEBO)、直流电流增益(hFE-1和hFE-2)和转换频率(fr)。

6. 应用信息: - 适用于中等功率的线性和开关应用。

7. 封装信息: - 提供了TO-126封装的简化外形图和符号,以及外形尺寸图。
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