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2N5295

2N5295

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2N5295 - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N5295 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION ·With TO-220 package ·High power dissipation APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N5293 VCBO Collector-base voltage 2N5295 2N5297 2N5293 VCEO Collector-emitter voltage 2N5295 2N5297 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 60 80 70 40 60 7 4 2 36 150 -65~150 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.47 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5293 VCEO(SUS) Collector-emitter sustaining voltage 2N5295 2N5297 2N5293 VCEsat Collector-emitter saturation voltage 2N5295 2N5297 2N5293 VBE Base-emitter on voltage 2N5295 2N5297 2N5293/5297 ICEV Collector cut-off current 2N5295 ICER Collector cut-off current 2N5293/5297 2N5295 IEBO Emitter cut-off current 2N5293/5297 2N5293 hFE DC current gain 2N5295 2N5297 fT Transition frequency 2N5293 ton Turn-on time 2N5295 2N5297 2N5293 toff Turn-off time 2N5295 2N5297 VEB=5V; IC=0 IC=0.1A ;IB=0 SYMBOL 2N5293 2N5295 2N5297 CONDITIONS MIN 70 40 60 TYP. MAX UNIT V IC=0.5A;IB=0.05A IC=1.0A;IB=0.1A IC=1.5A;IB=0.15A IC=0.5A ; VCE=4V IC=1.0A ; VCE=4V IC=1.5A ; VCE=4V VCE=65V;VBE=1.5V TC=150 VCE=35V;VBE=1.5V TC=150 VCE=50V;RBE=100< TC=150 VEB=7V; IC=0 1.0 mA 1.1 1.3 1.5 0.5 3.0 2.0 5.0 0.5 2.0 V 1.0 V mA mA IC=0.5A ; VCE=4V 30 IC=1.0A ; VCE=4V IC=1.5A ; VCE=4V IC=0.2A ; VCE=4V IC=0.5A;IB=0.05A;VCC=30V IC=1.0A;IB=0.1A;VCC=30V IC=1.5A;IB=0.15A;VCC=30V IC=0.5A;IB=0.05A;VCC=30V IC=1.0A;IB=0.1A;VCC=30V IC=1.5A;IB=0.15A;VCC=30V 15 µs 5.0 µs 20 0.8 80 MHz 120 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5293 2N5295 2N5297 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3
2N5295
物料型号: - 2N5293、2N5295、2N5297

器件简介: - 这些是SavantIC Semiconductor生产的硅NPN功率晶体管,采用TO-220封装,具有高功率耗散能力。

引脚分配: - 1号引脚:基极(Base) - 2号引脚:集电极,连接到安装底座(Collector;connected to mounting base) - 3号引脚:发射极(Emitter)

参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):2N5293为80V,2N5295为60V,2N5297为80V - VCEO(集电极-发射极电压):2N5293为70V,2N5295为40V,2N5297为60V - VEBO(发射极-基极电压):7V - Ic(集电极电流):4A - Ib(基极电流):2A - PT(总功率耗散):36W - Tj(结温):150°C - Tstg(储存温度):-65~150°C - 热特性: - Rjc(从结到外壳的热阻):3.47Ωm

功能详解: - 这些晶体管具有以下特性: - VCEO(sus)(集电极-发射极维持电压) - VCEsat(集电极-发射极饱和电压) - VBE(基极-发射极导通电压) - IcEv(集电极截止电流) - ICER(集电极截止电流) - IEBO(发射极截止电流) - hFE(直流电流增益) - fr(转换频率) - ton(导通时间) - tor(关断时间)

应用信息: - 适用于功率放大器和中速开关应用。

封装信息: - 封装类型为TO-220,具体尺寸见图2。
2N5295 价格&库存

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