2N5429

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5427 2N5429 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5427 VCBO Collector-base voltage 2N5429 2N5427 VCEO Collector-emitter voltage 2N5429 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 100 6 7 1 40 200 -65~200 V A A W Open emitter 100 80 V CONDITIONS VALUE 80 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5427 IC=50mA ;IB=0 2N5429 VCEsat-1 VCEsat-2 VBE sat-1 VBE sat-2 ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2N5427 2N5429 IEBO hFE-1 hFE-2 hFE-3 fT Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency IC=2A; IB=0.2A IC=7A ;IB=0.7A IC=2A; IB=0.2A IC=7A ;IB=0.7A VCB=Rated VCBO; IE=0 VCE= 75V; VBE(off)=-1.5V TC=150 VCE= 90V; VBE(off)=-1.5V TC=150 VEB=6V; IC=0 IC=0.5A ; VCE=2V IC=2A ; VCE=2V IC=5A ; VCE=2V IC=0.5A ; VCE=10V;f=10MHz CONDITIONS 2N5427 2N5429 SYMBOL MIN 80 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 100 0.7 1.2 1.2 2.0 0.1 0.1 1.0 0.1 1.0 0.1 30 30 20 20 MHz 120 mA V V V V mA ICEX Collector cut-off current mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5427 2N5429 Fig.2 outline dimensions 3