2N5466

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High-voltage capability ·Fast switching speeds ·Low collector saturation voltage APPLICATIONS ·They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5466 2N5467 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER 2N5466 Collector-base voltage 2N5467 Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open base Open collector Open emitter 700 400 7 3 5 1 140 150 -65~200 V V A A A W CONDITIONS VALUE 500 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.48 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5466 2N5467 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Trainsistion frequency CONDITIONS IC=0.2A ;IB=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=ratedVCBO; IE=0 VCE=ratedVCEO;VBE(off)=1.5V TC=125 VEB=5V; IC=0 IC=1A ; VCE=4V IC=2A ; VCE=4V IC=1A ; VCE=10V;f=1MHz 15 8 2.5 MHz MIN 400 2.0 2.0 1.0 1.0 5.0 1.0 45 TYP. MAX UNIT V V V mA mA mA SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEV IEBO hFE-1 hFE-2 fT 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5466 2N5467 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3