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2N5469

2N5469

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2N5469 - Silicon NPN Power Transistors - Savantic, Inc.

  • 数据手册
  • 价格&库存
2N5469 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High-voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5468 2N5469 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 2N5468 2N5469 Open base Open collector CONDITIONS Open emitter VALUE 500 700 400 7 3 5 1 70 150 -65~200 V V A A A W UNIT V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 5.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5468 2N5469 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Trainsistion frequency CONDITIONS IC=0.2A ;IB=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=ratedVCBO; IE=0 VCE=ratedVCEO;VBE(off)=1.5V TC=125 VEB=5V; IC=0 IC=3A ; VCE=5V IC=1A ; VCE=10V;f=1MHz 15 2.5 MIN 400 2.0 2.0 1.0 1.0 5.0 1.0 60 MHz TYP. MAX UNIT V V V mA mA mA SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEV IEBO hFE fT 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5468 2N5469 Fig.2 outline dimensions 3
2N5469 价格&库存

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