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2N5469

2N5469

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2N5469 - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N5469 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High-voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5468 2N5469 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 2N5468 2N5469 Open base Open collector CONDITIONS Open emitter VALUE 500 700 400 7 3 5 1 70 150 -65~200 V V A A A W UNIT V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 5.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5468 2N5469 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Trainsistion frequency CONDITIONS IC=0.2A ;IB=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=ratedVCBO; IE=0 VCE=ratedVCEO;VBE(off)=1.5V TC=125 VEB=5V; IC=0 IC=3A ; VCE=5V IC=1A ; VCE=10V;f=1MHz 15 2.5 MIN 400 2.0 2.0 1.0 1.0 5.0 1.0 60 MHz TYP. MAX UNIT V V V mA mA mA SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEV IEBO hFE fT 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5468 2N5469 Fig.2 outline dimensions 3
2N5469
1. 物料型号: - 型号为2N5468和2N5469,由SavantIC Semiconductor生产,是硅NPN功率晶体管。

2. 器件简介: - 这些晶体管采用TO-66封装,具有高电压能力、快速开关速度和低饱和电压。

3. 引脚分配: - PIN 1: Base(基极) - PIN 2: Emitter(发射极) - PIN 3: Collector(集电极)

4. 参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):2N5468为500V,2N5469为700V - VCEO(集电极-发射极电压):400V - VEBO(发射极-基极电压):7V - lc(集电极电流):3A - ICM(集电极峰值电流):5A - 1s(基极电流):1A - PD(总功率耗散):70W - Tj(结温):150°C - Tstg(储存温度):-65至200°C - 热特性: - Rjc(结到外壳的热阻):5.0°C/W

5. 功能详解: - 特性(在Tj=25°C时,除非另有说明): - VCEO(SUS)(集电极-发射极维持电压):400V - VCEsat(集电极-发射极饱和电压):2.0V - VBEsat(基极-发射极饱和电压):2.0V - IcBO(集电极截止电流):1.0mA - IcEV(集电极截止电流):1.0至5.0mA - IEBO(发射极截止电流):1.0mA - hFE(直流电流增益):15至60 - fr(过渡频率):2.5MHz

6. 应用信息: - 这些晶体管适用于离线电源、逆变器和转换器电路。

7. 封装信息: - 封装类型为TO-66,具体尺寸和外形见图2。
2N5469 价格&库存

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