2N5498

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High DC current gain ·Low saturation voltage ·High Safe Operating Area APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications. ·These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5498 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 130 7 15 4 200 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N5498 SYMBOL MAX UNIT VCEO(SUS) VCER VCEsat-1 VCEsat-2 ICEO ICEX IEBO hFE fT Collector-emitter sustaining voltage IC=0.2A ;IB=0 IC=0.2A ;RBE=100Ohm IC=8A; IB=0.8A IC=15A ;IB=3A VCE=130V; IB=0 VCE=130V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=15A ; VCE=5V IC=1A ; VCE=10V 130 V Collector-emitter sustaining voltage 150 V Collector-emitter saturation voltage 1.4 V Collector-emitter saturation voltage 4.0 V Collector cut-off current 2.0 2.0 10.0 1.0 mA Collector cut-off current mA Emitter cut-off current mA DC current gain 10 50 Transition frequency 1 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5498 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3