2N5597

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5597 2N5599 2N5601 2N5603 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5597 VCBO Collector-base voltage 2N5599/5601 2N5603 2N5597 VCEO Collector-emitter voltage 2N5599/5601 2N5603 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -80 -100 -120 -60 -80 -100 -5 -2 20 150 -65~150 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5597 VCEO(SUS) Collector-emitter sustaining voltage 2N5599/5601 2N5603 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5597/5601 hFE DC current gain 2N5599/5603 2N5597/5601 fT Transition frequency 2N5599/5603 2N5597 2N5599 2N5601 2N5603 SYMBOL CONDITIONS MIN -60 TYP. MAX UNIT IC=-50mA ;IB=0 -80 -100 V IC=-1A; IB=-0.1A IC=-1A ; VCE=-5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO,IB=0 VEB=-5V; IC=0 70 IC=-1A ; VCE=-5V 30 60 IC=-0.5A ; VCE=-10V 50 -1.0 -1.5 -0.1 -1.0 -0.1 200 90 V V mA mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5597 2N5599 2N5601 2N5603 Fig.2 outline dimensions 3