2N5612A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5612A DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 100 5 5 25 150 -65~150 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2N5612A SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat VBE ICBO ICEO IEBO hFE fT Collector-emitter sustaining voltage IC=50mA ;IB=0 IC=1A; IB=0.1A IC=2.5A ; VCE=5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO,IB=0 VEB=5V; IC=0 IC=2.5A ; VCE=5V IC=0.5A ; VCE=10V 100 V Collector-emitter saturation voltage 0.5 V Base-emitter on voltage 1.5 V Collector cut-off current 0.1 mA Collector cut-off current 1.0 mA Emitter cut-off current 0.1 mA DC current gain 30 150 Transition frequency 60 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5612A Fig.2 outline dimensions 3