2N5630

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION ·With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER Collector-base voltage 2N5629 2N5630 Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 2N5629 2N5630 Open collector Open base CONDITIONS Open emitter VALUE 100 120 100 120 7 16 20 5.0 200 200 -65~200 V A A A W V UNIT V VCEO VEBO IC ICM IB PD Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5629 2N5630 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5629 IC=0.2A ;IB=0 2N5630 IC=10A; IB=1A IC=16A ;IB=4A IC=10A; IB=1A IC=8A ; VCE=2V VCB=ratedVCBO; IE=0 2N5629 2N5630 VCE=50V; IB=0 1.0 VCE=60V; IB=0 VCE=ratedVCB; VBE(off)=1.5V TC=150 VEB=7V; IC=0 2N5629 hFE-1 DC current gain 2N5630 hFE-2 COB fT DC current gain Output capacitance Transition frequency IC=16A ; VCE=2V IE=0 ; VCB=10V ;f=0.1MHz IC=1A ; VCE=20V 1.0 IC=8A ; VCE=2V 20 4 500 pF MHz 80 25 1.0 5.0 1.0 100 mA mA mA 120 1.0 2.0 1.8 1.5 1.0 V V V V mA CONDITIONS MIN 100 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current ICEO Collector cut-off current ICEV IEBO Collector cut-off current Emitter cut-off current 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5629 2N5630 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3