2N5633

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5632 VCBO Collector-base voltage 2N5633 2N5634 2N5632 VCEO Collector-emitter voltage 2N5633 2N5634 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 100 120 140 100 120 140 7 10 150 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5632 VCEO(SUS) Collector-emitter sustaining voltage 2N5633 2N5634 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N5632 ICEO Collector cut-off current 2N5633 2N5634 ICEV IEBO Collector cut-off current Emitter cut-off current 2N5632 hFE DC current gain 2N5633 2N5634 fT Transition frequency IC=1A ; VCE=20V IC=5A ; VCE=5V IC=7A; IB=0.7A IC=10A ;IB=2A IC=10A ;IB=2A IC=5A ; VCE=5V VCE=50V; IB=0 VCE=60V; IB=0 VCE=70V; IB=0 IC=0.2A ;IB=0 SYMBOL 2N5632 2N5633 2N5634 CONDITIONS MIN 100 120 140 TYP. MAX UNIT V 1.0 3.0 2.5 1.5 V V V V 1.0 mA VCE=ratedVCB; VBE(off)=1.5V TC=150 VEB=7V; IC=0 25 20 15 1.0 1.0 5.0 1.0 100 80 60 mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5632 2N5633 2N5634 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3