2N5676

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5676 DESCRIPTION ·With TO-66 package ·High transition frequency APPLICATIONS ·For use as high-frequency drivers in audio amplifiers PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -125 -100 -5 -2 2 150 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.1A ;IB=0 IC=-1A; IB=-0.1A IC=-1A ;IB=-0.1A IC=-1A ; VCE=-5V VCE=-50V; IB=0 VCB=-125V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-5V IC=-0.5A ; VCE=-5V IC=-100mA;VCE=10V 50 50 50 MIN -100 TYP. 2N5676 SYMBOL VCEO(SUS) VCEsat VBEsat VBE ICEO ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V -0.5 -1.2 -1.2 -0.5 -0.1 -0.1 V V V mA mA mA 150 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5676 Fig.2 outline dimensions 3