2N5734

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5734 · DESCRIPTION ·With TO-3 package ·High current capability APPLICATIONS ·For linear amplifier and inductive switching applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 80 7 30 30 150 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A; IB=0 IC=15 A;IB=1.5 A IC=30 A;IB=6 A IC=15A ; VCE=2V VCB=100V; IE=0 VEB=7V; IC=0 IC=10A ; VCE=2V IC=20A ; VCE=4V IC=1A ; VCE=10V 30 5 30 MIN 80 2N5734 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 2.0 4.0 2.7 0.1 0.1 300 V V V mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5734 Fig.2 Outline dimensions 3