2N5876

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5877 2N5878 APPLICATIONS ·For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5875 2N5876 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5875 Collector-base voltage 2N5876 2N5875 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5876 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -10 -20 -4 150 200 -65~200 V A A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5875 2N5876 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5875 IC=-0.2A ;IB=0 2N5876 IC=-5A;IB=-0.5A IC=-10A;IB=-2.5A IC=-10A;IB=-2.5A IC=-4A ; VCE=-4V VCB=ratedVCBO; IB=0 2N5875 ICEO Collector cut-off current 2N5876 ICEX IEBO hFE-1 hFE-2 hFE-3 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Trainsistion frequency VCE=-40V; IB=0 VCE=ratedVCE; VBE=1.5V TC=150 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-4A ; VCE=-4V IC=-10A ; VCE=-4V IC=-0.5A ; VCE=-10V;f=1MHz 35 20 4 4 MHz 100 -0.5 -5.0 -1.0 mA mA VCE=-30V; IB=0 -1.0 mA -80 -1.0 -3.0 -2.5 -1.5 -0.5 V V V V mA CONDITIONS MIN -60 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5875 2N5876 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3