2N5886

2N5886

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2N5886 - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N5886 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5885 2N5886 DESCRIPTION ·With TO-3 package ·Complement to type 2N5883 2N5884 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER Collector-base voltage 2N5885 2N5886 2N5885 2N5886 CONDITIONS Open emitter VALUE 60 80 60 80 5 25 50 7.5 TC=25 200 200 -65~200 UNIT V VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature Open base Open collector V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5885 2N5886 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage 2N5885 IC=0.2A ;IB=0 2N5886 IC=15A; IB=1.5A IC=25A; IB=6.25A IC=25A; IB=6.25A IC=10A ; VCE=4V VCB=ratedVCBO; IB=0 2N5885 2N5886 VCE=30V; IB=0 2 VCE=40V; IB=0 VCE=ratedVCEO; VCE=ratedVCEO; TC=150 VEB=5V; IC=0 IC=3A ; VCE=4V IC=10A ; VCE=4V IC=25A ; VCE=4V IC=1A ; VCE=10V;f=1MHz 35 20 4 4 MHz 100 1 10 1 mA mA mA mA 80 1 4 2.5 1.5 1 V V V V mA CONDITIONS MIN 60 V TYP. MAX UNIT SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current ICEO ICEV Collector cut-off current (VBE(off)=1.5V) Emitter cut-off current DC current gain DC current gain DC current gain Trainsistion frequency IEBO hFE-1 hFE-2 hFE-3 fT Switching times tr ts tf Rise time Storage time Fall time IC=10A ;IB1=- IB2=1A VCC=30V 0.7 1.0 0.8 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5885 2N5886 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N5886
1. 物料型号: - 2N5885 - 2N5886

2. 器件简介: - 2N5885和2N5886是硅NPN功率晶体管,具有TO-3封装,是2N5883和2N5884的互补型号,适用于高功率耗散。

3. 引脚分配: - 1号引脚:基极(Base) - 2号引脚:发射极(Emitter) - 3号引脚:集电极(Collector)

4. 参数特性: - 集-基电压(VCBO):2N5885为60V,2N5886为80V - 集-射电压(VCEO):2N5885为60V,2N5886为80V - 发-基电压(VEBO):5V - 集电极电流(Ic):25A - 集电极峰值电流(ICM):50A - 基极电流(IB):7.5A - 总功率耗散(PD):200W - 结温(TJ):200°C - 存储温度(Tstg):-65°C至200°C

5. 功能详解: - 这些晶体管适用于功率线性和开关应用。 - 热阻(Rthjc):0.875°C/W,即从结到外壳的热阻。

6. 应用信息: - 适用于功率线性和开关应用。

7. 封装信息: - 封装类型为TO-3,具体尺寸见图2。
2N5886 价格&库存

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