2N6031

2N6031

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2N6031 - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N6031 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N5631 ·High collector sustaining voltage ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6031 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -7 -16 -20 -5.0 200 150 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current CONDITIONS IC=-0.2A ;IB=0 IC=-10A; IB=-1A IC=-16A ;IB=-4A IC=-10A; IB=-1A IC=-8A ; VCE=-2V VCB=ratedVCBO; IE=0 VCE=-70V; IB=0 VCE=ratedVCB VCE=ratedVCB; TC=150 IEBO hFE-1 hFE-2 COB fT Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency VEB=-7V; IC=0 IC=-8A ; VCE=-2V IC=-16A ; VCE=-2V IE=0 ; VCB=-10V ;f=0.1MHz IC=-1A ; VCE=-20V ;f=0.5MHz 1.0 15 4 MIN -140 TYP. 2N6031 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEO MAX UNIT V -1.0 -2.0 -1.8 -1.5 -2.0 -2.0 -2.0 V V V V mA mA ICEX Collector cut-off current (VBE(off)=1.5V) mA -7.0 -5.0 60 mA 1000 pF MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6031 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N6031
物料型号: - 型号:2N6031

器件简介: - 2N6031是一款硅PNP功率晶体管,具有TO-3封装,是2N5631的补充型号,具有高集电极承受电压、高直流电流增益、低集电极饱和电压等特点。

引脚分配: - 1号引脚:基极(Base) - 2号引脚:发射极(Emitter) - 3号引脚:集电极(Collector)

参数特性: - 绝对最大额定值: - VCBO:集电极-基极电压,开路发射极,-140V - VCEO:集电极-发射极电压,开路基极,-140V - VEBO:发射极-基极电压,开路集电极,-7V - Ic:集电极电流,-16A - ICM:集电极峰值电流,-20A - Is:基极电流,-5.0A - PD:总功率耗散,Tc=25℃时200W - Tj:结温,150℃ - Tstg:存储温度,-65~200℃

功能详解: - 2N6031适用于高功率音频放大器和高电压开关稳压器电路应用。在特定的工作条件下,该晶体管展现了不同的电气特性,包括集电极-发射极饱和电压(VEsat)、基极-发射极饱和电压(VBEsat)、基极-发射极导通电压(VBE)、集电极截止电流(IcBo、ICEO、IcEx)、发射极截止电流(IEBO)、直流电流增益(hFE-1、hFE-2)和输出电容(CoB)等。

应用信息: - 适用于高功率音频放大器和高电压开关稳压器电路。

封装信息: - 封装形式为TO-3,具体尺寸如图2所示,未标注的公差为±0.10mm。
2N6031 价格&库存

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