2N6055

2N6055

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2N6055 - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N6055 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6055 2N6056 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER Collector-base voltage 2N6055 2N6056 2N6055 2N6056 CONDITIONS Open emitter VALUE 60 80 60 80 5 8 16 120 TC=25 100 200 -65~200 UNIT V VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature Open base Open collector V V A A mA W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tm=25 unless otherwise specified PARAMETER 2N6055 IC=0.1 A ;IB=0 2N6056 IC=4A ;IB=16mA IC=8A ;IB=80mA IC=8A ;IB=80mA IC=4A ; VCE=3V 2N6055 ICEO Collector cut-off current 2N6056 2N6055 ICEX Collector cut-off current 2N6056 IEBO hFE-1 hFE-2 Cob Emitter cut-off current DC current gain DC current gain Output capacitance VCE=40V; IB=0 VCE=60V; VBE(off)=1.5V TC=150 VCE=80V; VBE(off)=1.5V TC=150 VEB=5V; IC=0 IC=4A ; VCE=3V IC=8A ; VCE=3V IE=0;VCB=10V;f=0.1MHz VCE=30V; IB=0 CONDITIONS SYMBOL 2N6055 2N6056 MIN 60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 80 2.0 3.0 4.0 2.8 V V V V VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltge Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 0.5 mA 0.5 5.0 0.5 5.0 2.0 750 100 220 18000 mA mA pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6055 2N6056 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N6055
1. 物料型号: - 型号为2N6055和2N6056,由SavantIC Semiconductor生产,是硅NPN功率晶体管。

2. 器件简介: - 这些晶体管采用TO-3封装,具有低集电极饱和电压,是达林顿配置,是2N6053和2N6054的互补型号。

3. 引脚分配: - 1号引脚为基极(Base), - 2号引脚为发射极(Emitter), - 3号引脚为集电极(Collector)。

4. 参数特性: - 绝对最大额定值包括:集电极-基极电压(VCBO)2N6055为60V,2N6056为80V;集电极-发射极电压(VCEO)2N6055为60V,2N6056为80V;发射极-基极电压(VEBO)为5V;集电极电流(Ic)为8A;集电极峰值电流(IcM)为16A;基极电流(IB)为120mA;总功率耗散(PD)在Tc=25℃时为100W;结温(Tj)为200℃;存储温度(Tstg)范围为-65℃至200℃。 - 热特性包括:结到壳的热阻(Rthjc)为1.75℃/W。

5. 功能详解: - 包括维持电压(VCEO(SUS))、饱和电压(VCEsat)、饱和基极-发射极电压(VBEsat)、基极-发射极导通电压(VBE)、集电极截止电流(ICEO和ICEx)、发射极截止电流(EBO)、直流电流增益(hFE-1和hFE-2)和输出电容(Cob)。

6. 应用信息: - 适用于通用功率放大器和低频开关应用。

7. 封装信息: - 提供了TO-3封装的简化外形图和符号,以及外形尺寸图,未标明的公差为±0.10mm。
2N6055 价格&库存

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