2N6229

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For high power audio; disk head positioners and other linear applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6229 VCBO Collector-base voltage 2N6230 2N6231 2N6229 VCEO Collector-emitter voltage 2N6230 2N6231 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -140 -100 -120 -140 -7 -10 150 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6229 VCEO(SUS) Collector-emitter sustaining voltage 2N6230 2N6231 VCEsat VBE ICEO ICBO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N6229 hFE DC current gain 2N6230 2N6231 fT Transition frequency IC=-0.5A ; VCE=-4V IC=-5A ; VCE=-2V IC=-4A; IB=-0.4A IC=-5A ; VCE=-2V IC=-0.2A ;IB=0 2N6229 2N6230 2N6231 SYMBOL CONDITIONS MIN -100 -120 -140 TYP. MAX UNIT V -1.0 -2.0 -5.0 -1.0 -0.1 25 20 15 1 100 80 60 V V mA mA mA VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VEB=-7V; IC=0 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6229 2N6230 2N6231 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3