2N6248

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6246 2N6247 2N6248 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6246 VCBO Collector-base voltage 2N6247 2N6248 2N6246 VCEO Collector-emitter voltage 2N6247 2N6248 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -70 -90 -110 -60 -80 -100 -5 -15 -5 125 150 -65~200 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.4 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6246 VCEO(SUS) Collector-emitter sustaining voltage 2N6247 2N6248 2N6246 VCEsat-1 Collector-emitter saturation voltage 2N6247 2N6248 2N6246 VCEsat-2 Collector-emitter saturation voltage 2N6247 2N6248 2N6246 VBE Base-emitter on voltage 2N6247 2N6248 ICEO Collector cut-off current 2N6246 ICEX Collector cut-off current 2N6247 2N6248 2N6246 IEBO Emitter cut-off current 2N6247 2N6248 2N6246 hFE-1 DC current gain 2N6247 2N6248 2N6246 hFE-2 DC current gain 2N6247 2N6248 IC=-7A ; VCE=-4V IC=-6A ; VCE=-4V IC=-5A ; VCE=-4V IC=-15A ; VCE=-4V IC=-15A ; VCE=-4V IC=-10A ; VCE=-4V VEB=-5V; IC=0 IC=-7A; IB=-0.7A IC=-6A; IB=-0.6A IC=-5A; IB=-0.5A IC=-15A; IB=-3A IC=-15A; IB=-4A IC=-0.2A ;IB=0 CONDITIONS SYMBOL 2N6246 2N6247 2N6248 MIN -60 -80 -100 TYP. MAX UNIT V -1.3 V -2.5 V -3.5 IC=-10A; IB=-2A IC=-7A ; VCE=-4V IC=-6A ; VCE=-4V IC=-5A ; VCE=-4V VCE=1/2Rated VCEO; IB=0 VCE=-65V; VBE=-1.5V VCE=-55V; VBE=-1.5V TC=150 VCE=-85V; VBE=-1.5V VCE=-70V; VBE=-1.5V TC=150 VCE=-100V; VBE=-1.5V VCE=-90V; VBE=-1.5V TC=150 -2.0 -1.8 -1.8 -1.0 -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 -5.0 mA -1.0 mA V mA 20 100 5 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6246 2N6247 2N6248 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3