2N6257

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6257 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 50 40 5 20 150 150 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltge Collector-emitter saturation voltge Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=8A ;IB=0.8A IC=20A ;IB=4A VCE=40V; IB=0 VCE=50V; VBE(off)=1.5V TC=150 VCB=50V; IE=0 VEB=5V; IC=0 IC=8A ; VCE=4V IC=20A ; VCE=4V IC=1A;VCE=10V 15 5 0.8 MIN 40 TYP. 2N6257 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 ICEO ICEV ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V 1.5 4.0 1.0 0.1 5.0 0.1 0.1 75 V V mA mA mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6257 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3